Abstract
Al x O y films by DC reactive magnetron sputtering were annealed in air ambient at 500 °C for 1 h with different heating rates of 5, 15, and 25 °C/min.Then heat treatments at 900 °Cwere carried out on these 500 °C-annealed films to simulate the high-temperature application environment. Effects of the annealing heating rate on structure and properties of both 500 °C-annealed and 900 °C-heated films were investigated systematically.It was found that distinct γ-Al2O3 crystallization was observed in the 900 °C-heated films only when the annealing heating rates are 15 and 25 °C/min. The 500 °C-annealed film possessed the most compact surface morphology in the case of 25 °C/min. The highest microhardness of both 500 °C-annealed and 900 °C-heated films were obtained when the annealing heating rate was 15 °C/min.
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Tang, X. Effects of the annealing heating rate on sputtered aluminum oxide films. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 32, 94–99 (2017). https://doi.org/10.1007/s11595-017-1565-2
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DOI: https://doi.org/10.1007/s11595-017-1565-2