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Small Rb+ doping in CaCu3Ti4O12-A possible approach to reduce dielectric loss

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Abstract

Ca1−x Rb x Cu3Ti4O12 (x=0, 0.01, 0.02 and 0.03) ceramics were synthesized by the sol-gel method. Doping Rb+ reduces dielectric loss, which reaches minimum when x=0.02. By measuring properties of electrical conduction, larger leakage current density and height of grain-boundary Schottky potential barrier (ϕB) were found in the doped samples, and ϕB became maximum when x=0.02. These results are attributed to the increase in the amount of oxygen vacancies and the formation of Cu-rich/Ti-poor grain-boundary layers, and it can be concluded that the dielectric loss in CCTO ceramic can be reduced by manipulating the composition and electrical properties of grain boundary.

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Authors and Affiliations

  1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China

    Fan Yi  (易凡) & Rui Xiong  (熊锐)

Authors
  1. Fan Yi  (易凡)
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  2. Rui Xiong  (熊锐)
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Correspondence to Rui Xiong  (熊锐).

Additional information

Funded by The National Natural Science Foundation of China (Nos. 51172166, 51202078, and 61106005)

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Yi, F., Xiong, R. Small Rb+ doping in CaCu3Ti4O12-A possible approach to reduce dielectric loss. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 29, 912–916 (2014). https://doi.org/10.1007/s11595-014-1019-z

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  • DOI: https://doi.org/10.1007/s11595-014-1019-z

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