Abstract
While BIMEVOX systems have attracted the attention of researchers for their electrical conductivity by O2− oxide ions at relatively low temperatures, there is only a limited number of works concerning their local structure. In this work, the Bi4V1.7(Si.Me)0.3O11-δ (Me = Si, P, Cu, and Co) system is studied using X-ray powder diffraction (XRD), Raman spectroscopy, IR spectroscopy, SEM–EDX, UV–visible spectrophotometry, and differential scanning calorimetry (DSC). The three main polymorphs α, β, and γ are obtained at room temperature. In the case of the Bi4Si0.15P0.15V1.70O11-δ compound, two successive structural transitions were observed, while only one structural transition was observed for the Bi4Si0.30V1.70O11-δ compound. The UV–vis diffuse reflectance spectroscopy (DRS) indicates that the double-doped Bi4V1.7(Si.Me)0.3O11-δ compounds present a band gap energy in the range 1.76 ≤ Eg ≤ 2.36 eV and Bi4Si0.15Co0.15V1.70O11-δ presents the narrowest band gap.
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Acknowledgements
The authors are grateful to the Cadi Ayyad University Analysis and Characterization Center (CAC) for providing them with materials characterization techniques.
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A. Agnaou: investigation, writing original draft, formal analysis; W. Mhaira: helped the interpretation of results; R. Essalim: writing review and editing; M. ALGA: investigation; M. Zamama: investigation; F. Mauvy: investigation; A. Ammar: conceived the idea and supervision.
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Agnaou, A., Mhaira, W., Essalim, R. et al. Effect of the doping element on the structure and UV–visible properties in the system Bi4V1.7(Si,Me)0.3O11-δ (Me = Si, P, Cu, and Co). Ionics 29, 4923–4932 (2023). https://doi.org/10.1007/s11581-023-05185-7
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DOI: https://doi.org/10.1007/s11581-023-05185-7