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The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

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Abstract

The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 \(\Omega ^{-1}\hbox { cm}^{-1}\) is determined experimentally for the first time. Together with 821 \(\Omega ^{-1}\hbox { cm}^{-1}\) in Fe(111) and 1100 \(\Omega ^{-1}\hbox { cm}^{-1}\) in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.

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Acknowledgments

This work was supported by the National Basic Research Program of China (2015CB921400 and 2011CB921802) and the National Natural Science Foundation of China (11374057, 11434003 and 11421404).

Conflict of interest

The authors declare that they have no conflict of interest.

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Authors and Affiliations

  1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China

    Jianli Xu, Lin Wu, Yufan Li, Dai Tian, Kai Zhu, Xinxin Gong & Xiaofeng Jin

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  1. Jianli Xu
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  2. Lin Wu
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  3. Yufan Li
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  4. Dai Tian
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  5. Kai Zhu
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  6. Xinxin Gong
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  7. Xiaofeng Jin
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Correspondence to Jianli Xu or Xiaofeng Jin.

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Xu, J., Wu, L., Li, Y. et al. The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110). Sci. Bull. 60, 1261–1265 (2015). https://doi.org/10.1007/s11434-015-0831-y

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  • DOI: https://doi.org/10.1007/s11434-015-0831-y

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