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Surface roughness modulated resistivity in copper thin films

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Abstract

The surfaces of metallic thin films are never flat. The resistivity in thin films is very different from that in bulk because of the unavoidable rough surfaces. In this study, we apply a quantum-mechanical method to study the resistivity in metallic thin films. The resulting resistivity formula for metallic thin films merely involves two parameters: bulk relaxation time and surface roughness. We use the formula to fit a large number of experimental data sets for copper thin films obtained using different growing methods. With an additional tuning parameter for calibrating the film thickness, the quantum formula can provide a universal fitting to most data with a satisfactory precision, regardless of their growing methods or data source.

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Authors and Affiliations

  1. Department of Physics, Beijing Normal University, Beijing, 100875, China

    HongKang Song & Ke Xia

  2. Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, China

    Jiang Xiao

  3. Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, China

    Jiang Xiao

Authors
  1. HongKang Song
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  2. Ke Xia
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  3. Jiang Xiao
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Correspondence to Ke Xia or Jiang Xiao.

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Song, H., Xia, K. & Xiao, J. Surface roughness modulated resistivity in copper thin films. Sci. China Phys. Mech. Astron. 61, 107011 (2018). https://doi.org/10.1007/s11433-018-9199-8

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  • DOI: https://doi.org/10.1007/s11433-018-9199-8

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