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Electrical transport and photoresponse properties of single-crystalline p-type Cd3As2 nanowires

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  • Condensed Matter Physics
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Abstract

Cd3As2 is an important II–V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high I on/I off of 104 with a hole mobility of 6.02 cm2V−1s−1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and optoelectronic devices.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China

    TingYuan Duan

  2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    TingYuan Duan, Zheng Lou & GuoZhen Shen

Authors
  1. TingYuan Duan
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  2. Zheng Lou
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  3. GuoZhen Shen
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Correspondence to GuoZhen Shen.

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Recommended by LI ShuShen (Associate Editor-in-Chief)

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Duan, T., Lou, Z. & Shen, G. Electrical transport and photoresponse properties of single-crystalline p-type Cd3As2 nanowires. Sci. China Phys. Mech. Astron. 58, 1–6 (2015). https://doi.org/10.1007/s11433-014-5629-4

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  • DOI: https://doi.org/10.1007/s11433-014-5629-4

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