Abstract
In this paper, poly(pyridine-imide)s, PI-Ph and PI-Naphth, were successfully synthesised and fabricated for use as memory devices. The Al/PI-Ph/indium tin oxide (ITO) device showed dynamic random access memory characteristics, whereas Al/PI-Naphth/ITO showed rewritable (FLASH) memory characteristics. Characterisation of their UV, cyclic voltammograms, and density functional theory, were used to illustrate the different memory behaviours. The results show that the stability of electric-field-induced-charge-transfer complexes can affect memory performance.
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This work was supported by the National Natural Science Foundation of China (21336005, 21371128), and the major research project of Jiangsu Province Office of Education (15KJA150008).
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Chen, H., Wu, L., Xiao, X. et al. Synthesis of poly(pyridine-imide)s and their electronic memory performances. Sci. China Chem. 60, 237–242 (2017). https://doi.org/10.1007/s11426-016-0369-y
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DOI: https://doi.org/10.1007/s11426-016-0369-y