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Insigths into the Tribochemistry of Silicon-doped Carbon-Based Films by Ab Initio Analysis of Water–Surface Interactions

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An Erratum to this article was published on 15 March 2016

Abstract

Diamond and diamond-like carbon are used as coating materials for numerous applications, ranging from biomedicine to tribology. Recently, it has been shown that the hydrophilicity of the carbon films can be enhanced by silicon doping, which highly improves their biocompatibility and frictional performances. Despite the relevance of these properties for applications, a microscopic understanding on the effects of silicon is still lacking. Here, we apply ab initio calculations to study the interaction of water molecules with Si-incorporating C(001) surfaces. We find that the presence of Si dopants considerably increases the energy gain for water chemisorption and decreases the energy barrier for water dissociation by more than 50 %. We provide a physical rational for the phenomenon by analyzing the electronic charge displacements occurring upon adsorption. We also show that once hydroxylated, the surface is able to bind further water molecules much strongly than the clean surface via hydrogen bond networks. This two-step process is consistent with and can explain the enhanced hydrophilic character observed in carbon-based films doped by silicon.

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Notes

  1. The latter are identified by comparing the water adsorption energy at different locations. In particular, we sample six positions on a homogeneous grid along the [110] direction centered on the Si atom and covering the heterodimer and half of the sp 3 trench. The in-plane coordinates of the oxygen atom are fixed at the grid point, and all the other degrees of freedom are fully relaxed except for the slab bottom layer

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Acknowledgments

We acknowledge the CINECA consortium for the availability of high-performance computing resources and support through the ISCRA-B TRIBOGMD project.

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Authors and Affiliations

  1. Toyota Central R&D Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi, 480-1192, Japan

    Seiji Kajita

  2. Istituto Nanoscienze, CNR-Consiglio Nazionale delle Ricerche, 41125, Modena, Italy

    Seiji Kajita & M. C. Righi

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  1. Seiji Kajita
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  2. M. C. Righi
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Correspondence to M. C. Righi.

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Kajita, S., Righi, M.C. Insigths into the Tribochemistry of Silicon-doped Carbon-Based Films by Ab Initio Analysis of Water–Surface Interactions. Tribol Lett 61, 17 (2016). https://doi.org/10.1007/s11249-015-0631-1

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