The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in InGaN/AlGaN/GaN heterostructures with one filled size quantization subband. A mathematical model is created that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of calculation of the matrix scattering potentials demonstrated the reliability and consistency on the model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the relaxation time limiting the mobility of a two-dimensional electron gas under piezoelectric scattering is of the order of 10–9 s.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 9–19, May, 2021.
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Burmistrov, E.R., Avakyants, L.P. & Afanasova, M.M. Piezoelectric Relaxation of Two-Dimensional Electron Gas in Heterostructures with InGaN/GaN Quantum Wells. Russ Phys J 64, 770–782 (2021). https://doi.org/10.1007/s11182-021-02391-6
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DOI: https://doi.org/10.1007/s11182-021-02391-6