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Crystallization Kinetics of Amorphous AgInS2 Film

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The paper deals with crystallization kinetics of amorphous AgInS2 film. The dependence between lnln(V0 / (V0 –Vt) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS2 film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3π) \( {\eta}_n{\eta}_c^2. \)

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Authors and Affiliations

  1. Azerbaijan State University of Economics, Baku, Azerbaijan

    N. K. Kerimova

  2. The Institute of Physics ANAS, Baku, Azerbaijan

    A. Ch. Mamedova

Authors
  1. N. K. Kerimova
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  2. A. Ch. Mamedova
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Correspondence to N. K. Kerimova.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 83–86, December, 2017.

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Kerimova, N.K., Mamedova, A.C. Crystallization Kinetics of Amorphous AgInS2 Film. Russ Phys J 60, 2144–2148 (2018). https://doi.org/10.1007/s11182-018-1338-1

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  • DOI: https://doi.org/10.1007/s11182-018-1338-1

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