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Model of an Injection Semiconductor Quantum-Dot Laser

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Radiophysics and Quantum Electronics Aims and scope

We propose an asymmetric electron–hole model of an injection semiconductor quantum-dot laser, which correctly allows for relaxation at transitions between the electron and hole levels. Steady-state solutions of the proposed model, conditions for the simultaneous operation at transitions between the ground and first excited state levels, and relaxation oscillations in the two-wave lasing regime are studied. It is shown that the model can be simplified when the relaxation between hole levels is much faster than the relaxation between electron levels.

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Authors and Affiliations

  1. Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia

    I. V. Koryukin

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  1. I. V. Koryukin
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Correspondence to I. V. Koryukin.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 60, No. 11, pp. 993–1001, November 2017.

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Koryukin, I.V. Model of an Injection Semiconductor Quantum-Dot Laser. Radiophys Quantum El 60, 889–896 (2018). https://doi.org/10.1007/s11141-018-9855-x

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  • DOI: https://doi.org/10.1007/s11141-018-9855-x

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