Abstract
In this study, undoped and Ag-doped HfO2 thin films were deposited on glass substrates by means of sol–gel dip coating method. These films were then thermally annealed at 500 °C for 1 h. The structural and optical properties of undoped and Ag-doped HfO2 thin films were characterized by X-ray diffraction, UV–Vis spectrometry and scanning electron microscope. The results of this analysis were compared and interpreted with the results obtained in literature by various methods of coating with HfO2. The X-ray diffraction peaks of the films paired with monoclinic HfO2 crystalline peaks. The refractive indices of the films decreased with doping Ag, at 500 nm wavelengths. The optical band gap values of Ag-doped HfO2 thin films increased with doping Ag. The porous structures were observed on the surface films, especially with 5% Ag doping.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Boher, P., Defraneaux, C., Heinrich, P., Wolsenholme, J., Bender, H.: VUV spectroscopic ellipsometry applied to the characterization of high-k dielectrics. Mater. Sci. Eng. B109, 64–68 (2004)
Callegari, A., Cartier, E., Gribelyuk, M., Okorn-Schmidt, H.F., Zabel, T.: Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films. J. Appl. Phys. 90, 6466–6475 (2001)
Chen, S., Liu, Z., Feng, L., Che, X., Zhao, X.: Effect of ytterbium inclusion in hafnium oxide on the structural and electrical properties of the high-k gate dielectric. J. Rare Earths 32, 580–584 (2014)
Das, S., Alford, T.L.: Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing. J. Appl. Phys. (2013). https://doi.org/10.1063/1.4812584
Deng, B., He, G., Lv, J.G., Chen, X.F., Zhang, J.W., Zhang, M., Sun, Z.Q.: Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power. Opt. Mater. 37, 245–250 (2014)
Essary, C., Howard, J.M., Craciun, V., Craciun, D., Singh, R.K.: Kinetics of interfacial layer formation during deposition of HfO2 on silicon. Thin Solid Films 450, 111–113 (2004)
Fang, Q., Zhang, J.Y., Wang, Z.M., He, G., Yu, J., Boyd, J.W.: High-k dielectrics by UV photo-assisted chemical vapour deposition. Microelectron. Eng. 66, 621–630 (2003)
Fang, Q., Zhang, J.Y., Wang, Z., Modreanu, M., O’Sullivan, B.J., Hurley, P.K., Leedham, T.L., Huywel, D., Audier, M.A., Jiminez, C., Senateur, J.P., Boyd, J.W.: Interface of ultrathin HfO2 films deposited by UV-photo-CVD. Thin Solid Films 453–454, 203–207 (2004)
Ferrari, S., Modreanu, M., Scarel, G., Fancinelli, M.: X-ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials. Thin Solid Films 450, 124–127 (2004)
Gruger, H., Kunath, Ch., Kurth, E., Sorge, S., Pufe, W., Pechstein, T.: High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing. Thin Solid Films 447–448, 509–515 (2004)
Hakeem, A., Ramzan, M., Ahmed, E., Rana, A.M., Khalid, N.R., Niaz, N.A., Shakoor, A., Ali, S., Asghar, U., Nadeem, M.Y.: Effects of vacuum annealing on surface and optical constants of hafnium oxide thin films. Mater. Sci. Semicond. Process. 30, 98–103 (2015)
He, G., Fang, Q., Liu, M., Zhu, L.O., Zhang, L.D.: The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films. J. Cryst. Growth 268, 155–162 (2004)
Kariper, I.A.: Production of HfO2 thin films using different methods: chemical bath deposition, silar and sol–gel process. Int. J. Miner. Metall. Mater. 21, 832–838 (2014)
Kidchob, T., Malfatti, L., Serra, F., Falcaro, P., Enzo, S., Innocenzi, P.: Hafnia sol–gel films synthesized from HfCl4: changes of structure and properties with the firing temperature. J. Sol-Gel. Sci. Technol. 42, 89–93 (2007)
Lee, B.H., Kang, L., Nieh, R., Qi, W.J., Lee, J.C.: Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing. Appl. Phys. Lett. 76–14, 1926–1928 (2000)
Pakma, O., Ozdemir, C., Kariper, I.A., Ozaydın, C., Gullu, O.: Wet chemical methods for producing mixing crystalline phase ZrO2 thin film. Appl. Surf. Sci. 377, 159–166 (2016)
Ramzan, M., Wasig, M.F., Rana, A.M., Ali, S., Ndeem, M.Y.: Characterization of e-beam evaporated hafnium oxide thin films on post thermal annealing. Appl. Surf. Sci. 283, 617–622 (2013)
Robertson, J., Chen, C.W.: Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate. Appl. Phys. Lett. 74, 1168–1170 (1999)
Robertson, J.: Band offsets of wide-band-gap oxides and implications for future electronic devices. J. Vac. Sci. Technol. B 18, 1785–1789 (2000)
Subrahmanyam, A., Barik, U.K.: Electrical and optical properties of silver doped indium oxide thin filmsprepared by reactive DC magnetron sputtering. J. Phys. Chem. Solids 67, 1518–1523 (2006)
Sun, J.K., Cho, B.J., Ming, F.L., Yu, X., Zhu, C., Chin, A.: PVD HfO2 for high-precision MIM capacitor applications. IEEE Electron. Device Lett. 24, 387–389 (2003)
Tan, T., Liu, Z., Lu, H., Liu, W., Tian, H.: Structure and optical properties of HfO2 thin films on silicon after rapid thermal annealing. Opt. Mater. 32(3), 432–435 (2010)
Wang, S.J., Lim, P.C., Huan, A.C.H., Liu, C.L., Chai, J.W., Chow, S.Y., Pan, J.S., Li, Q., Ong, K.: Reaction of SiO2 with hafnium oxide in low oxygen pressure. Appl. Phys. Lett. 82–13, 2047–2049 (2003)
Wang, Z.J., Kumagai, T., Kokawa, H., Ichiki, M., Maeda, R.: Preparation of hafnium oxide thin films by sol–gel method. J. Electroceram. 21, 499–502 (2008)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Pakma, O., Kaval, S. & Kariper, İ.A. Ag-doped HfO2 thin films via sol–gel dip coating method. Opt Quant Electron 51, 342 (2019). https://doi.org/10.1007/s11082-019-2055-x
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-019-2055-x