Abstract
We propose a method which delivers optimal cubic GaN/AlGaN quantum well profiles such that both the Stark effect and peak intersubband absorption from the ground to the first excited electronic state, in a prescribed range of bias electric fields, are maximized. Our method relies on the Genetic Algorithm which finds globally optimal structures with a predefined number of embedded layers. We investigate simple rectangular quantum wells with embedded step layers for applications in tunable mid-infrared photodetectors. The effects of band nonparabolicity are taken into account to refine our model.
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The authors acknowledge support from MPNS COST ACTION MP1204 - TERA-MIR Radiation: Materials, Generation, Detection and Applications and BMBS COST Action BM1205 - European Network for Skin Cancer Detection using Laser Imaging, as well as the Ministry of Education, Science and Technological Development (Republic of Serbia), project ev.no. III 45010.
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Radosavljević, A., Radovanović, J., Milanović, V. et al. Cubic GaN/AlGaN based quantum wells optimized for applications to tunable mid-infrared photodetectors. Opt Quant Electron 47, 865–872 (2015). https://doi.org/10.1007/s11082-014-0016-y
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DOI: https://doi.org/10.1007/s11082-014-0016-y