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Effect of heat convection on the thermal and structure stress of high-power InGaN light-emitting diode

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Abstract

In this study, two models are investigated: (1) the convection cooling of high-power indium–gallium–nitride light-emitting diodes (LEDs) and (2) the effects of thermal stress distribution. The first model chip (model A) has power of 1 and 3 W and dimensions of 1 mm × 1 mm × 0.005 mm, whereas the second model chip (model B) has power of 6 and 10 W and dimensions of 1.8 mm × 1.8 mm × 0.005 mm. The results of an analysis of natural convection, forced cooling, and thermal stress are compared with 1, 3, 6, and 10 W thermal specification data. High heat conductivity Al2O3 material used as a printed circuit board (PCB) facilitates the heat conduction and thermal cooling of high-power LEDs and thus increases the strength of the structure. This LED structure model is used in full-scale packaging structures. The wire bonding convection cooling and effect of thermal stress distribution of this packaging design are investigated. We simulate thermal performance and effect of thermal stress distribution of the LEDs using a finite element method with ANSYS software. Heat transfer is coupled with heat conduction, heat convection, and thermal radiation, with the distribution of thermal stress equivalent to that of the von Mises criterion stress. LED is attached to a silicon substrate by wire bonding; the die bond material used is epoxy. LED packaging material is important. If the LED lighting power is fixed, it can increase the convection cooling coefficient, decreases the T j temperature, and the distribution of structural stress. The T j temperature is stable when the heat transfer coefficient had a critical or optimal value. Thermal cooling performance and overall structural strength can be improved when the LED is mounted on the Al2O3 PCB material and heat sink. The models are employed accurately to determine the heat transfer effect, structural strength, life span, performance enhancement, and efficiency.

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Abbreviations

CMM:

Cubic meter per minute (m3 min−1)

c :

Specific heat capacity of the material (J kg−1 K−1)

E :

The Young’s modulus coefficient (GPa)

FEM:

Finite element method

h c :

Heat transfer coefficient or heat convection coefficient (W m−2 K−1)

InGaN:

Indium–gallium–nitride

k a :

The air conductivity coefficient (W m−1 K−1)

k x, k y, k z :

Heat conductivity coefficient (W m−1 K−1) of the material in the x, y, and z directions, respectively

LEDs:

Light-emitting diodes

L ch :

The characteristic length of the geometries

n x, n y, n z :

Normal directions outside the boundary

PCB:

Printed circuit board

P f :

The face loading

Pr :

The Prandtl number (Pr = v/α) (Pr = 0.72 for air)

\( P_{{\epsilon_{\text{o}} }} \) :

The temperature strain-induced loading

P v :

The volume loading

Q = Q(x, y, z, t):

Internal heat source (W kg−1) of the body

q = q(F 2, t):

The given heat flux (W m−2) in the F 2 boundary

T :

Temperature (°C)

\( \bar{T} = \bar{T}(F_{1} ,t) \) :

The given temperature (start setting from 25 °C add to steady state heat transfer temperature) in the F 1 boundary

T a = T a(F 3, t):

The ambient temperature (°C) in natural convection or the adiabatic wall temperature of the boundary layer in forced convection

ΔT :

Difference between surface and ambient temperature, ΔT = T surface −T ambient

T ambient, T a :

Ambient temperature (°C)

T avg. :

Average temperature (°C), \( T_{{{\text{avg}}.}} = {{\left( {T_{\text{surface}} - T_{\text{ambient}} } \right)} \mathord{\left/ {\vphantom {{\left( {T_{\text{surface}} - T_{\text{ambient}} } \right)} 2}} \right. \kern-0pt} 2} \)

T case :

Case temperature (°C) for LED

T j :

Junction temperature (°C) for LED

T j,spec. :

Junction temperature (°C) for LED specification

T o :

Initial temperature (°C) of the material structure

T surface :

Surface temperature (°C)

t :

Time (s)

W cons. :

LED power consumption (Watt)

W act :

LED actual input power (Watt)

α :

Thermal expansion coefficient (°C−1) of the material

α :

The thermal diffusivity

ɛ – ɛ o :

Difference in temperature-induced strain

ν :

The momentum diffusivity

ρ :

Density (kg m−3)

σ :

The normal or thermal stress (MPa)

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Acknowledgements

The authors would like to thank the Ministry of Science and Technology of Taiwan of the Republic of China for financially supporting this research under contract number NSC 102-2622-E-167-022-CC3, NSC 101-2622-E-167-014-CC3, and NSC 100-2815-C-167-002-E. Thanks for the retired Associate Professor Chang-Yuan Liu suggest in solid state lighting element, and the Associate Professor Yu-Lieh Wu support the standard airflow rate apparatus (AMCA 210-99).

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Authors and Affiliations

  1. Department of Refrigeration, Air Conditioning and Energy Engineering, National Chin-Yi University of Technology, Taichung City, 41170, Taiwan, ROC

    Chih-Neng Hsu & Chun-Chieh Huang

  2. Institute of Precision Mechatronic Engineering, Minghsin University of Science and Technology, Hsinfeng Township, 30401, Hsinchu County, Taiwan, ROC

    Yu-Hsuan Wu

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  1. Chih-Neng Hsu
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Hsu, CN., Huang, CC. & Wu, YH. Effect of heat convection on the thermal and structure stress of high-power InGaN light-emitting diode. J Therm Anal Calorim 119, 1245–1257 (2015). https://doi.org/10.1007/s10973-014-4221-5

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  • DOI: https://doi.org/10.1007/s10973-014-4221-5

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