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Fabrication of heterostructure NiO/ZnO thin film for pseudocapacitor application

  • Original Paper: Sol–gel and hybrid materials for energy, environment and building applications
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Abstract

An ordered NiO/ZnO heterojunction electrochemical electrode was prepared on an FTO substrate by using the spin-coating method. XRD patterns confirmed the ZnO NRs of varying lengths and NiO NPs of varying sizes are grown in the same manner as hexagonal wurtzite and cubic crystal structures, respectively. An important outcome is that both the crystal structures are fused together as a heterostructure film. Almost all Zn, Ni and O atoms primarily involved in forming heterostructure films are strongly observed. Furthermore, the charge carrier transition from the conduction band edge and/or localised defect state to the valance band edge is measured by photoluminescence spectra. Eventually, it is perceived that p-type NiO/ZnO heterostructure film has ferromagnetism, whereas n-type ZnO and p-type NiO films have weak FM and superparamagnetism. The GCD of the NiO/ZnO thin film electrode display a pseudocapacitive behaviour. A maximum Csp of 114 F/cm3 is obtained from both the CV and GCD studies, which are mainly attributed to the morphological characteristics of nanorod and nanoparticle self-assembling architectures, as well as a rational composition of the two constituents. The experimental results reveal that the spin-coated NiO/ZnO thin films are promising materials for electrochemical supercapacitors.

Graphical abstract

Highlights

  • The deposited NiO/ZnO, a p-n combined structure semiconductor, consists of ordered hexagonal rod ZnO matrix coated by a layer of NiO nanograins.

  • Innovatively, ordered rodlike ZnO with larger specific area increases the loading of active NiO and creates more active sites due to the surface area and charge transfer capability was increased.

  • Due to the contribution of p-n heterojunction structure and the synergistic effect, our prepared ordered NiO/ZnO pseudocapacitor shows a wider potential window of 0.5 V.

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Acknowledgements

GVP thanks DST for financial support by NPDF (PDF/2017/000348) under the SERB Scheme and also acknowledges RUSA-Phase 2.0 (No. F.24-51/2014-U), Policy (TNMulti-Gen), Department of Education Government of India, date 9 October 2018.

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Authors and Affiliations

  1. PG & Research, Department of Physics, Sree Sevugan Annamalai College, Devakottai, 630 303, Tamil Nadu, India

    G. Vijaya Prasath

  2. Department of Physics, Alagappa University, Karaikudi, 630 004, Tamil Nadu, India

    G. Vijaya Prasath, M. Karuppaiah & G. Ravi

  3. Materials Electrochemistry Division (MED), CSIR-CECRI, Karaikudi, 630 003, Tamil Nadu, India

    G. Vijaya Prasath

  4. Department of Physics, Bannari Amman Institute of Technology, Sathyamangalam, Tamil Nadu, India

    K. S. Usha

  5. St. Joseph’s College of Engineering, Chennai, Tamil Nadu, India

    P. Krishnan

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  1. G. Vijaya Prasath
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Vijaya Prasath, G., Usha, K.S., Karuppaiah, M. et al. Fabrication of heterostructure NiO/ZnO thin film for pseudocapacitor application. J Sol-Gel Sci Technol 104, 198–210 (2022). https://doi.org/10.1007/s10971-022-05919-5

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  • DOI: https://doi.org/10.1007/s10971-022-05919-5

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