Abstract
Epitaxial La0.7Ca0.25Sr0.05MnO3 (LCSMO) thin films were successfully prepared on LaAlO3 (LAO) substrates by ordinary aqueous sol–gel method. X-ray diffraction result shows that the films have perfect crystalline orientation. The HRTEM results confirm that the films have epitaxial structure and the interface is very sharp and no misfit dislocations. The selected area electron diffraction patterns and fast Fourier transformation patterns mean that there exist three domains in the thin film. The single-particle spin-flip excitations are dominant for the metallic ferromagnets in low-temperature range. In paramagnetic range, the temperature dependence of resistivity can be well analyzed using a small polaron theory. The magnetoresistance value for the films reaches maximum about 65 % with 7 T magnetic field at 285 K which is promising for highly demanding applications. The conventional sol–gel method produces the lanthanum manganese oxide thin films with excellent epitaxial structure and large magnetoresistance at room temperature which can be used for either fundamental studies or real applications.
Graphical Abstract
The conventional sol–gel method produces the lanthanum manganese oxide thin films with excellent epitaxial structure and giant magnetoresistance at room temperature which can be used for either fundamental studies or real applications.
Similar content being viewed by others
References
Salamon MB, Jaime M (2001) Rev Mod Phys 73:583
Yamada H, Ogawa Y, Ishii Y, Sato H, Kawasaki M, Akoh H, Tokura Y (2004) Science 305:646
Hwang HY, Cheong SW, Ong NP, Batlogg B (1996) Phys Rev Lett 77:2041
Urushibara A, Moritomo Y, Arima T, Asamitsu A, Kido G, Tokura Y (1995) Phys Rev B 51:14103
Moreo A, Yunoki S, Dagotto E (1999) Science 283:2034
Schiffer P, Ramirez AP, Bao W, Cheong SW (1995) Phys Rev Lett 75:3336
Jin S, Tiefel TH, McCormack M, Fastnacht RA, Ramesh R, Chen LH (1994) Science 264:413
Jin S, McCormack M, Tiefel TH, Ramesh R (1994) J Appl Phys 76:6929
Phan MH, Yu SC, Hur NH (2005) Appl Phys Lett 86:072504
Prokhorov VG, Komashko VA, Kaminsky GG, Lee YP, Hyun YH, Yu KK, Park JS, Svetchnikov VL (2006) Low Temp Phys 32:650
Thanh TD, Nguyen LH, Manh DH, Chien NV, Phong PT, Khiem NV, Hong LV, Phuc NX (2012) Phys B 407:145
Cao DY, Zhang YY, Dong WX, Yang J, Bai W, Chen Y, Wang GS, Dong XL, Tang XD (2015) Ceram Int 41:S381
Tomioka Y, Asamitsu A, Tokura Y (2000) Phys Rev B 63:024421
Jaime M, Haidner HT, Salamon MB, Rubinstein M, Dorsey P, Emin D (1997) Phys Rev Lett 78:951
Jakob G, Westerburg W, Martin F, Adrian H (1998) Phys Rev B 58:14966
Adamo C, Perroni CA, Cataudella V, Filippis GD, Orgiani P, Maritato L (2009) Phys Rev B 79:045125
Moon EJ, Balachandran PV, Kirby BJ, Keavney DJ, Sichel-Tissot RJ, Schleputz CM, Karapetrova E, Cheng XM, Rondinelli JM, May SJ (2014) Nano Lett 14:2509
Jain M, Shukla P, Li Y, Hundley MF, Wang H, Foltyn SR, Burrell AK, McCleskey TM, Jia QX (2006) Adv Mater 18:2695
Jain M, Lin Y, Shukla P, Li Y, Wang H, Hundley MF, Burrell AK, McCleskey TM, Foltyn SR, Jia QX (2007) Thin Solid Films 515:6411
Staruch M, Gao H, Gao PX, Jain M (2012) Adv Funct Mater 22:3591
Rivadulla F, Bi Z, Bauer E, Rivas-Murias B, Vila-Fungueiriño JM, Jia QX (2013) Chem Mater 25:55
Vila-Fungueiriño JM, Rivas-Murias B, Rodríguez-González B, Rivadulla F (2014) Chem Mater 26:1480
Hasenkox U, Mitze C, Waser R (1997) J Am Ceram Soc 80:2709
Ren Q, Zhang YY, Chen Y, Wang GS, Dong XL, Tang XD (2013) J Sol-Gel Sci Technol 67:170
Yin WH, Zhang YY, Cao DY, Yang J, Bai W, Chen Y, Wang GS, Dong XL, Duan CG, Tang XD (2015) J Appl Phys 117:17E102
Méchin L, Wu S, Guillet B, Perna P, Fur C, Lebargy S, Adamo C, Schlom DG, Routoure JM (2013) J Phys D Appl Phys 46:202001
Hibble SJ, Copper SP, Hannon AC, Fawcett ID, Greenblatt M (1999) J Phys Condens Matter 11:9221
Snyder GJ, Hisks R, DiCarolis S, Bwasley MR, Geballe TH (1996) Phys Rev B 53:14434
Hundley MF, Hawley M, Heffner RH, Jia QX, Neumeier JJ, Tesmer J, Thompson JD, Wu XD (1995) Appl Phys Lett 67:860
Jain M, Bauer E, Ronning F, Hundley MF, Civale L, Wang H, Maiorov B, Burrell AK, McClesky TM, Foltyn SR, Depaula RF, Jia QX (2008) J Am Ceram Soc 91:1858
Sun Y, Xu X, Zheng L, Zhang Y (1999) Phy Rev B 60:12317
Moshnyaga V, Gehrke K, Lebedev O, Sudheendra L, Belenchuk A, Raabe S, Shapoval O, Verbeeck J, Van Tendeloo G, Samwer K (2009) Phys Rev B 79:134413
Acknowledgments
The work was supported by National Natural Science Foundation of China (Grant Nos. 51302084, 11104074, 61574058, 61176011, 61376129, 11374098 and 11304097), Natural Science Foundation of Shanghai (Nos. 13ZR1412200), Key Laboratory of Inorganic function material and device, Chinese Academy of Sciences (KLIFMD-2011-06, KLIFMD-2012-01) and Fundamental Research Funds for the Central Universities (ECNU) and Key Laboratory of Polar Materials and Devices, Ministry of Education.
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Zhang, Y., Dong, W., Qi, R. et al. Large room-temperature magnetoresistance in epitaxial La0.7Ca0.25Sr0.05MnO3 thin films prepared by sol–gel method. J Sol-Gel Sci Technol 78, 576–581 (2016). https://doi.org/10.1007/s10971-016-4000-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10971-016-4000-9