Abstract
Thermal behavior of vacancy-type defects in polycrystalline ZnO was studied by the positron annihilation lifetime spectroscopy. Two-component analysis of the PALS spectra revealed that the defect-related longer-lifetime component decreases as the annealing temperature is raised, and almost disappears within 15 min when annealed at 1,273 K. We also found that the intensity of this component decreases with increasing density of the annealed ZnO pellets; however, little density dependence was seen in its lifetime. These observations evidently suggest that this component having long lifetime of about 400 ps corresponds to the positrons trapped in grain boundaries in the polycrystalline ZnO.
Similar content being viewed by others
References
Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T (2005) Prog Mater Sci 50:293–340
McCluskey MD, Jokela SJ (2009) J Appl Phys 106:071101-1–071101-13
Dutta S, Chattopadhyay S, Sarkar A, Chakrabarti M, Sanyal D, Jane D (2009) Prog Mater Sci 54:89–136
Krause-Rehberg R, Leipner HS (1999) Positron annihilation in semiconductors. Springer, Heidelberg
Saarinen K, Hautojärvi P, Corbel C (1998) In: Stavola M (ed) Identification of Defects in Semiconductors. Academic Press, New York
Olsen JV, Kirkegaard P, Pedersen NJ, Eldrup M (2007) Phys Status Solidi (C) 4:4004–4006
Chen ZQ, Yamamoto S, Maekawa M, Kawasuso A, Yuan XL, Sekiguchi T (2003) J Appl Phys 94:4807–4812
Tumisto F, Ranki V, Saarinen K, Look DC (2003) Phys Rev Lett 91:205502-1–205502-4
Chen ZQ, Wang SJ, Maekawa M, Kawasuso S, Naramoto H, Yuan XL, Sekiguchi T (2007) Phys Rev B 75:245206-1–245206-9
Acknowledgments
This work was supported in part by JSPS KAKENHI Grant Number 23600004.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ono, R., Togimitsu, T. & Sato, W. Evaluation of vacancy-type defects in ZnO by the positron annihilation lifetime spectroscopy. J Radioanal Nucl Chem 303, 1223–1226 (2015). https://doi.org/10.1007/s10967-014-3452-z
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10967-014-3452-z