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Restrained dielectric loss and elevated breakdown strength in Si/PVDF composites by engineering SiO2 shell as an interlayer

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Abstract

As the electronic industry develops rapidly, nowadays, flexible dielectric materials with excellent integrated dielectric performances including high dielectric permittivity (ɛ) and breakdown strength (Eb) but low loss, are highly pursued. In this work, to concurrently improve the ɛ and Eb but restrain the loss of original Si/polyvinylidene fluoride (PVDF) composites, the core@shell structured Si@SiO2 particles first were produced via high temperature oxidation process, and then incorporated into the PVDF to generate morphology-dependent composites with high-ɛ and Eb but low loss. The dielectric properties of the composites were investigated in terms of the filler types and concentrations, frequency, and theoretically fitted using the Havriliak-Negami equation to reveal the SiO2 shell’ role in affecting the polarization mechanism. When compared to pure Si/PVDF at high filler loadings, remarkably inhibited dielectric loss and conductivity as well as enhanced Eb concurrently can be achieved in the Si@SiO2/PVDF composites still harvesting a high-ɛ. This is because the insulating SiO2 shell not only effectively prevents the raw Si particles from direct physical contact, but also greatly impedes the long-range charge carrier migration via raising energy barrier subsequently leading to obviously enhanced Eb. Moreover, the dielectric loss and conductivity apparently decrease with increasing the SiO2 shell thickness due to its pronounced suppression effect. The prepared Si@SiO2/PVDF with a high Eb and ɛ but low loss, show bright future uses in micro-electronic devices used for high-voltage purposes.

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Data availability

The data that support the findings of this study are available on request from the corresponding author, [W.Y. Zhou]，upon reasonable request.

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Funding

The authors gratefully acknowledge the financial supports from the National Natural Science Foundation of China (No.52277028, 51937007), Shaanxi Provincial Natural Science Foundation of China (No.2022JM-186), and acknowledge the Analytic Instrumentation Center of XUST.

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Authors and Affiliations

  1. School of Chemistry and Chemical Engineering, Xiʼan University of Science & Technology, Xiʼan, 710054, China

    Na Lin, Wenying Zhou, Weiwei Peng, Fanrong Kong, Ming Gong, Hongmei Niu, Dengfeng Liu & Aihong Feng

  2. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA

    Mengxue Yuan

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  1. Na Lin
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  2. Wenying Zhou
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  3. Weiwei Peng
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  4. Fanrong Kong
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  5. Ming Gong
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  7. Dengfeng Liu
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Correspondence to Wenying Zhou, Ming Gong or Mengxue Yuan.

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Lin, N., Zhou, W., Peng, W. et al. Restrained dielectric loss and elevated breakdown strength in Si/PVDF composites by engineering SiO2 shell as an interlayer. J Polym Res 30, 145 (2023). https://doi.org/10.1007/s10965-023-03528-6

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