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Effect of Annealing Atmosphere on Microstructure, Magnetic, and Microwave Properties of Barium Hexaferrite Thin Films

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Abstract

Barium hexaferrite (BaM) has attracted more and more attention in the fields of microwave devices because of its large saturation magnetization (Ms) and high magnetocrystalline anisotropy field. In this report, highly oriented barium hexaferrite thin films were grown on Pt-coated Si substrate by sol–gel way with different annealed atmosphere. It is found that the thin film has nice properties when it is annealed in N2 + O2 atmosphere. It is confirmed by X-ray diffraction and atomic force microscopy that the film exhibiting strong c-axis orientation and Lotgering factor is 0.96. Magnetic hysteresis loops revealed BaM has strong sign of anisotropy with squareness ratio of 0.93, and the 4πMs is 3956 Gs. Meanwhile, ferromagnetic resonance (FMR) measurement shows the FMR linewidth is as low as 125 Oe @50Ghz, and anisotropy field is 16.22 kOe. These data make sure these BaM thin films are suitable application for millimeter wave devices, for example, circulators, isolators, and filters.

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Funding

This work was supported by the Hainan Provincial Natural Science Foundation of China (120RC455), the Natural Science Foundation of China (No. 61901142), and the Key Research and Development Project of Hainan Province (ZDYF2022SHFZ093).

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Authors and Affiliations

  1. State Key Laboratory of Marine Resource Utilization in South China Sea, School of Materials Science and Engineering, Hainan Provincial Key Laboratory of Research On Utilization of Si-Zr-Ti Resources, Hainan University, Haikou, 570228, China

    Min Gao, Ruoshui You, Yifeng Wang & Daming Chen

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  1. Min Gao
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  2. Ruoshui You
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  3. Yifeng Wang
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  4. Daming Chen
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Correspondence to Daming Chen.

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Gao, M., You, R., Wang, Y. et al. Effect of Annealing Atmosphere on Microstructure, Magnetic, and Microwave Properties of Barium Hexaferrite Thin Films. J Supercond Nov Magn 35, 3683–3688 (2022). https://doi.org/10.1007/s10948-022-06428-w

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  • DOI: https://doi.org/10.1007/s10948-022-06428-w

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