Abstract
Here, we report single crystalline growth, characterization, and magneto-transport study of SmxSb2-xTe3 (x = 0 and 0.05) topological insulator. Single crystals were grown by solid state reaction by following self-flux method. Phase purity, single crystalline growth, and layered structure were confirmed by X-ray diffraction (XRD) spectra and scanning electron microscopy (SEM) images. Elemental composition was extracted by using energy dispersive X-ray analysis (EDAX) and Raman spectra were obtained at room temperature to study the vibrational modes or grown SmxSb2-xTe3 single crystal. Sb2Te3 shows the ≈ 550% magnetoresistance at 12 Tesla and 2 K, which further reduced to ≈ 210% at 12 Tesla and 2 K by doping of Sm in Sb2Te3. A v-type cusp was observed in low magnetic field regime (≤ 1 Tesla) at all measured temperatures for both crystals, which was analyzed by using Hikami-Larkin-Nagaoka (HLN) equation. The extracted parameters α and phase coherence length (Lφ) show the presence of weak anti-localization effect in both crystals. Furthermore, to study the effect of temperature and magnetic field on conduction, field-dependent quadratic term and linear term were added in conventional HLN model which explains the contribution of quantum scattering and bulk contribution in magnetoconductivity, respectively.
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The authors would like to thank the Director of National Physical Laboratory (NPL), India, for his keen interest in the present work. The authors would also like to thank UGC and CSIR, India, for research fellowship, and AcSIR-NPL for Ph.D. registration.
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Kumar, K., Kumar, Y. & Awana, V.P.S. Growth and Characterization of Pure and Sm-Doped Sb2Te3 Single Crystal. J Supercond Nov Magn 35, 2601–2608 (2022). https://doi.org/10.1007/s10948-022-06363-w
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DOI: https://doi.org/10.1007/s10948-022-06363-w