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Electron emission properties of cold cathodes based on porous silicon layer processed by electrochemical oxidation and high-pressure water vapor annealing

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Abstract

Porous silicon (PS) layers were processed by electrochemical oxidation (ECO) and high-pressure water vapor annealing (HWA) after they were prepared on n+-type silicon substrates with the double-cell anodic etching technique. The cathodes with a multilayer structure of Pt/PS layer/n+-Si/ohmic-contact electrode were fabricated, and their electron emission properties were investigated. The experimental results showed that it is difficult to get a sufficient and uniform oxidation for a PS layer by merely using ECO, while HWA can assist ECO to improve the oxidation quality of the PS layer, and the emission current density and efficiency of the porous silicon cathode can be increased by the combined treatment of HWA and ECO.

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References

  1. W.K. Yue, D.L. Parker, M.H. Weichold, Technical Digest-International Electron Devices Meeting, California. USA, 167 (1990)

  2. H. Kim, J.-W. Park, J.-W. Lee, Y.-H. Lee, B.-K. Ju, M.-H. Oh, Y.-H. Song, J.-H. Lee, K.-I. Cho, J. Jang, Society for Information Display 2002 Inernational Symposium, Boston, USA, 365 (2002)

  3. I.-H. Jang, J.E. Kim, G.-H. Ryu, S.-Y. Choi, Mol. Cryst. Liq. Cryst. 499, 160 (2009)

    Article  Google Scholar 

  4. T. Ichihara, T. Hatai, N. Koshida, J. SID 18(3), 223 (2010)

    CAS  Google Scholar 

  5. N. Mori, H. Minari, S. Uno, H. Mizuta, N. Koshida, Appl. Phys. Lett. 98, 062104 (2011)

    Article  Google Scholar 

  6. T. Komoda, Y. Honda, T. Ichihara, T. Hatai, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, N. Koshida, Society for Information Display 2002 Inernational Symposium, Boston, USA, 1128 (2002)

  7. F. Zhong, Z.-H. Jia, Phys. B 411, 77 (2013)

    Article  CAS  Google Scholar 

  8. A. Kojima, N. Koshida, Appl. Phys. Lett. 86, 022102 (2005)

    Article  Google Scholar 

  9. T. Komoda, T. Ichihara, Y. Honda, T. Hatai, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, N. Koshida, J. SID 12(1), 29 (2004)

    CAS  Google Scholar 

  10. Y.J. Zhang, X.N. Zhang, W.J. Wang, C.L. Liu, J. Nanosci. Nanotechnol. 12(8), 6548 (2012)

    Article  CAS  Google Scholar 

  11. X. Sheng, A. Kojima, T. Komoda, N. Koshida, J. Vac. Sci. Technol. B 19(1), 64 (2001)

    Article  CAS  Google Scholar 

  12. X. Sheng, H. Koyama, N. Koshida, J. Vac. Sci. Technol. B 16(2), 793 (1998)

    Article  CAS  Google Scholar 

  13. T. Ichihara, T. Hatai, K. Aizawa, T. Komoda, A. Kojima, N. Koshida, J. Vac. Sci. Technol. B 22(1), 57 (2004)

    Article  CAS  Google Scholar 

  14. T. Ichihara, Y. Honda, T. Baba, T. Komoda, N. Koshida, J. Vac. Sci. Technol. B 22(4), 1784 (2004)

    Article  CAS  Google Scholar 

  15. T. Ichihara, Y. Honda, T. Baba, Y. Takegawa, Y. Watabe, T. Hatai, K. Aizawa, T. Komoda, V. Vezin, N. Koshida, The Ninth International Display Workshops. Hiroshima, Japan, 1033 (2002)

  16. S.K. Han, S.I. Kwon, S.C. Bae, S.Y. Choi, The 11th International Display Workshops. Niigata, Japan, 1233 (2004)

  17. T. Ohta, A. Kojima, N. Koshida, J. Vac. Sci. Technol. B 25(2), 524 (2007)

    Article  CAS  Google Scholar 

  18. X.G. Zhang, Electrochemistry of Silicon and Its Oxide (Kluwer Academic/Plenum Publishers, New York, 2001)

    Google Scholar 

  19. W. Luo, W.B. Hu, Z. Yang, Z.X. Song, H.Y. Wu, Asia Display 2011. Kunshan, China, 693 (2011)

  20. B. Gelloz, N. Koshida, J. Appl. Phys. 98, 123509 (2005)

    Article  Google Scholar 

  21. B. Gelloz, A. Kojima, N. Koshida, Appl. Phys. Lett. 87, 031107 (2005)

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported by the National Natural Science Foundation of China under Grant No. 61275023 and No. 51271140, and the Fundamental Research Funds for the Central Universities under Grant No. xjj20100158.

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Authors and Affiliations

  1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an, 710049, China

    Wenbo Hu, Xiaolei Zhao, Jinlong Fan, Shengli Wu & Jingtao Zhang

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  1. Wenbo Hu
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  2. Xiaolei Zhao
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  3. Jinlong Fan
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  4. Shengli Wu
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  5. Jingtao Zhang
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Correspondence to Wenbo Hu.

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Hu, W., Zhao, X., Fan, J. et al. Electron emission properties of cold cathodes based on porous silicon layer processed by electrochemical oxidation and high-pressure water vapor annealing. J Porous Mater 22, 761–767 (2015). https://doi.org/10.1007/s10934-015-9949-1

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  • DOI: https://doi.org/10.1007/s10934-015-9949-1

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