Abstract
High spectral resolution detectors based on low-resistivity transition-edge sensors (TES) are being developed for future X-ray spatial observatories, but difficulties (cryogenics limitations) are to be expected in next generation’s detectors with even more pixels. A new technology, the high-resistivity TES (HRTES), is likely to offer similar performance to existing TES when associated to an active electrothermal feedback, adding the possibility of moving the readout electronics to a 2.5 K stage of the cryocooler. This work aims to investigate HRTES by making a precise model of the device, comparing it to experimental measurements, and deducing its performance potential.
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Notes
In particular, Fig. 2a, b shows that the variation of the thermometer resistance Rt according to the silicon bulk temperature Tb (increasing with the heating bias) and the bias current (proportional to Vpol, because Rpol ≫ Rt) is reproduced relatively accurately by simulation thanks to the electrons–phonons decoupling included in the model, without having to introduce a direct dependence between Rt and the bias current, as the βI term (see for example Bennett et al. [11] or Smith et al. [12]. This would tend to mean that, so far measurements indicate, this term is likely small and therefore a negligible contribution, especially in detection configuration where, once the bias point selected, the current through the thermometer always remains almost constant, as Rpol≫ Rr. Nevertheless, this will be investigated in more detail in the future (evaluation of the possible impact on noise).
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We thank our funding partners: Labex P2IO and CEA Saclay.
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Jego, G., de la Broïse, X., Sauvageot, JL. et al. High-Resistivity Transition-Edge Sensor Modeling and Expected Performances. J Low Temp Phys 199, 88–94 (2020). https://doi.org/10.1007/s10909-020-02426-1
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DOI: https://doi.org/10.1007/s10909-020-02426-1