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Controlled growth of CuO nanowires on Cu grid via thermal oxidation process with enhanced field electron emission properties

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Abstract

We report improved field electron emission (FEE) properties of copper oxide (CuO) nanowires (NWs) emitter by adjusting their aspect ratio, density at emitting edges, and strength of the NWs. We have grown CuO NWs by controlled morphology on copper grid via two-stage annealing process. In the first step of annealing performed at 200 °C for 2 h, creation of nucleation sites for growth of the NWs is achieved. Subsequently, a second annealing phase at 400 °C for another 2 h leads to the emergence of vertically aligned NWs. These structures are notably dense at their base, with an approximate width of 23 nm and lengths reaching several micrometers, as indicated by SEM analysis. During the FEE, the field screening effect is noticeably minimized as the NWs are quite long and well separated at apex. The turn-on field (Eon) is observed to be 4.72 V/μm (10 μA/cm2). A maximum emission current density (J) of ~ 14.11 mA/cm2 has been drawn from the emitter, at an applied field ~ 11.12 V/μm. The enhancement in the emission current density after stability is because of desorption of the gases and the presence of clean emitting sites on the emitter surface. The emission at preset value ~ 15 μA is observed to be very stable over more than 3 h. These results are the implications of unceasing quest for the development, production, and improvement of integrated field emitters based on self-supportive 1D nanostructures.

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Data availability

The data that support the findings of this study are available from the corresponding authors upon reasonable request.

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Acknowledgements

SSW thankful to the SERB-TARE fellowship (TAR/2020/000257). Authors are also thankful to Indian Institute of Science Education and Research (IISER), Pune for the characterization support.

Funding

This work was financially supported by the SERB-TARE project (TAR/2020/ 000257) of Department of Science and Technology (DST), India. MAM would like to acknowledge the financial support from DST, Govt. of India under the CEFIPRA project 68TF-1 for carrying out Field Emission work.

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Conceptualization: SSG and MAM; Methodology: SSG; Formal analysis and investigation: SSG and SSW; Writing—original draft preparation: SSG, SSW, and MAM; Writing—review and editing: SSG, SSW, and MAM; Funding acquisition: SSW and MAM; Resources: SSW and MAM; Supervision: SSW and MAM.

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Correspondence to Sambhaji S. Warule.

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The corresponding author consciously assure that for the manuscript “Controlled Growth of CuO Nanowires on Cu Grid via Thermal Oxidation Process with Enhanced Field Electron Emission Properties” the following is fulfilled: This material is the authors’ own original work, which has not been previously published elsewhere. The paper is not currently being considered for publication elsewhere. The paper reflects the authors’ own research and analysis in a truthful and complete manner. The paper properly credits the meaningful contributions of co-authors and co-researchers. The results are appropriately placed in the context of prior and existing research. All sources used are properly disclosed (correct citation). All authors have been personally and actively involved in substantial work leading to the paper, and will take public responsibility for its content. The author agree with the above statements and declare that this submission follows the policies of Journal of Materials Science: Materials in Electronics as outlined in the Guide for Authors and in the Ethical Statement.

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Gaikwad, S.S., Warule, S.S. & More, M.A. Controlled growth of CuO nanowires on Cu grid via thermal oxidation process with enhanced field electron emission properties. J Mater Sci: Mater Electron 35, 935 (2024). https://doi.org/10.1007/s10854-024-12683-5

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