Skip to main content
SpringerLink
Log in

Comparison of electrical characteristics of aerosol-deposited Ga2O3/4H-SiC heterojunctions as a function of thickness

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing Ga2O3 thin films on 4H-SiC substrates using aerosol deposition (AD). X-ray diffraction (XRD) analysis showed that all Ga2O3 peaks increased with increasing oxide thickness. Scanning electron microscopy (SEM) was performed to confirm grain size and deposited area. The I–V curves showed relevance between oxide thickness and electrical properties. For these thin films, the 1200 nm sample shows low Vth among them. It was confirmed that the Ron,sp value and the On-state current increased as the oxide thickness increased.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

Data availability

Data will be made available on request.

References

  1. D. Garrido-Diez, I. Baraia, Review of wide bandgap materials and their impact in new power devices, in 2017 IEEE International Workshop of Electronics, Control, Measurement, Signals and Their Application to Mechatronics (ECMSM) (IEEE, 2017)

  2. U.K. Mishra et al., GaN-based RF power devices and amplifiers. Proc. IEEE 96(2), 287–305 (2008)

    Article  CAS  Google Scholar 

  3. A. Bykhovski, B. Gelmont, M. Shur, Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure for arbitrary growth orientation. Appl. Phys. Lett. 63(16), 2243–2245 (1993)

    Article  CAS  Google Scholar 

  4. S.-W. Jung et al., Influence of gas annealing on sensitivity of aln/4h-sic-based temperature sensors. Materials 14(3), 683 (2021)

    Article  CAS  PubMed  PubMed Central  Google Scholar 

  5. M.N. Yoder, Wide bandgap semiconductor materials and devices. IEEE Trans. Electron. Dev. 43(10), 1633–1636 (1996)

    Article  CAS  Google Scholar 

  6. L. Zhu et al., A multiple-phase-shift control for a SiC-based EV charger to optimize the light-load efficiency, current stress, and power quality. IEEE J. Emerg. Sel. Topics Power Electron. 6(4), 2262–2272 (2018)

    Article  Google Scholar 

  7. X. Ding et al., Analytical and experimental evaluation of SiC-inverter nonlinearities for traction drives used in electric vehicles. IEEE Trans. Veh. Technol. 67(1), 146–159 (2017)

    Article  Google Scholar 

  8. W.A. Khan et al., Fault interruption scheme for HVDC system using SiC-MESFET and VCB based hybrid circuit breaker. IEEE Access 9, 157371–157383 (2021)

    Article  Google Scholar 

  9. B. Fu et al., A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism. J. Semicond. 40(1), 011804 (2019)

    Article  CAS  Google Scholar 

  10. J. Akedo, Room temperature impact consolidation and application to ceramic coatings: aerosol deposition method. J. Ceram. Soc. Jpn. 128(3), 101–116 (2020)

    Article  CAS  Google Scholar 

  11. H.-K. Kim et al., Relation between electrical properties of aerosol-deposited BaTiO3 thin films and their mechanical hardness measured by nano-indentation. Nanoscale Res. Lett. 7, 1–8 (2012)

    Article  Google Scholar 

  12. J.M. Oh et al., Thickness dependence of dielectric properties in BaTiO3 films fabricated by aerosol deposition method. Mater. Sci. Eng. B 161(1–3), 80–84 (2009)

    Article  CAS  Google Scholar 

  13. J.-M. Oh, S.-M. Nam, Causes of high leakage currents in thin BaTiO3 films prepared by aerosol deposition method. J. Korean Phys. Soc. 56, 448 (2010)

    Article  CAS  Google Scholar 

  14. J.-M. Oh, H.-J. Kim, S.-M. Nam, Characterization of leakage current mechanisms for aerosol-deposited BaTiO3 thin films at room temperature. J. Korean Ceram. Soc. 57(4), 1096–1101 (2010)

    CAS  Google Scholar 

  15. M.K. Yadav, S.K. Sharma, A. Bag, Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate. J. Mater. Sci. 31, 13845–13856 (2020)

    CAS  Google Scholar 

  16. T. Kim et al., Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices. Appl. Phys. Lett. (2023). https://doi.org/10.1063/5.0124781

    Article  PubMed  Google Scholar 

  17. A. Agarwal, B.J. Baliga, Performance enhancement of 2.3 kV 4H-SiC planar-gate MOSFETs using reduced gate oxide thickness. IEEE Trans. Electron Dev. 68(10), 5029–5033 (2021)

    Article  CAS  Google Scholar 

  18. S. Fan et al., Thickness modulation of incline-grown Bi2O2Se for the construction of high-performance phototransistors. Appl. Phys. Lett. (2023). https://doi.org/10.1063/5.0149922

    Article  Google Scholar 

  19. Y. Zhang et al., Thickness-dependent thermal conductivity of mechanically exfoliated β-Ga2O3 thin films. Appl. Phys. Lett. (2020). https://doi.org/10.1063/5.0004984

    Article  PubMed  Google Scholar 

  20. S.J. Pearton et al., A review of Ga2O3 materials, processing, and devices. Appl. Phys. Rev. (2018). https://doi.org/10.1063/1.5006941

    Article  Google Scholar 

  21. S.-Y. Moon et al., Effect of nitrogen and oxygen annealing on (Al0.1Ga0.9)2O3/4H-SiC heterojunction diodes. Thin Solid Films 751, 139204 (2022)

    Article  CAS  Google Scholar 

  22. H.-K. Kim et al., Densification mechanism of BaTiO3 films on Cu substrates fabricated by aerosol deposition. Electron. Mater. Lett. 11, 388–397 (2015)

    Article  CAS  Google Scholar 

  23. Y.-M. Lu et al., Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering. Mater. Chem. Phys. 72(2), 269–272 (2001)

    Article  CAS  Google Scholar 

  24. N. Badawi et al., Investigation of the dynamic on-state resistance of 600 V normally-off and normally-on GaN HEMTs. IEEE Trans. Ind. Appl. 52(6), 4955–4964 (2016)

    Article  CAS  Google Scholar 

  25. W. Tress et al., Interpretation and evolution of open-circuit voltage, recombination, ideality factor and subgap defect states during reversible light-soaking and irreversible degradation of perovskite solar cells. Energy Environ. Sci. 11(1), 151–165 (2018)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was supported by the Kwangwoon University in 2023, the Korea Institute for Advancement of Technology (KIAT) (P0012451) and the Technology Innovation Program (RS-2022-00154720) grant funded by the MOTIE of Korea.

Author information

Authors and Affiliations

  1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of South Korea

    Hyun-Woo Lee, Ji-Soo Choi, Seung-Hwan Chung, Soo-Young Moon, Hyung-Jin Lee, Geon-Hee Lee, Weon-Ho Shin, Jong-Min Oh & Sang-Mo Koo

Authors
  1. Hyun-Woo Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Ji-Soo Choi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Seung-Hwan Chung
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Soo-Young Moon
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Hyung-Jin Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Geon-Hee Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Weon-Ho Shin
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Jong-Min Oh
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Sang-Mo Koo
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

All authors certify that they have participated sufficiently in the work to take public responsibility for the content.

Corresponding authors

Correspondence to Jong-Min Oh or Sang-Mo Koo.

Ethics declarations

Competing interests

The authors would like to clarify that there is no financial/non financial interests that are directly or indirectly related to the work submitted for publication.

Ethical approval

This article does not contain any studies involving human participants performed by any of the authors.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lee, HW., Choi, JS., Chung, SH. et al. Comparison of electrical characteristics of aerosol-deposited Ga2O3/4H-SiC heterojunctions as a function of thickness. J Mater Sci: Mater Electron 35, 683 (2024). https://doi.org/10.1007/s10854-024-12122-5

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s10854-024-12122-5

Search

Navigation