Abstract
Fluorescent nanoscale semiconducting crystals, that are called quantum dots, have shown great significance in quantum optics because of their optoelectronic features owing to their propensity to divulge photoluminescence with controllable wavelength depending on the mean size of these nanostructures. Here, we report for the first time the synthesis of water-soluble In1−xAcxAs QD using the mercaptoacetic acid-assisted colloidal technique. The impact of the actinium (Ac) doping on the lattice structures of indium arsenide (InAs) nanocrystals was examined. The Ac-dopant expanded the InAs cubic crystals from 0.653 nm to 0.665 nm. The elemental composition and oxidation states of the In1−xAcxAs QD were studied using the XPS measurements. The Raman measurements inspect the ability of Ac doping to change the longitudinal optical and transverse optical phonon vibrational modes. The Ac doping decreased the bandgap from 1.53 to 1.32 eV and increased the emission intensities through a wide range of wavelengths by 12-fold. The Ac dopant was found to raise the quantum yield of the InAs to 85% and produce highly fluorescent light with a narrow bandwidth because of the ability of Ac doping to passivate the surface defects of the InAs QDs. The optoelectronic characteristics of the fabricated Ag/n-si/In1−xAcxAs/Ag photodiodes indicated these photodiodes have a fast response towards incident light photons and revealed high stability and reproducibility.
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Gahtany, S. Structural, luminescence and optoelectronic properties of the In1−xAcxAs quantum dots prepared using mercaptoacetic acid-assisted colloidal technique for photodiode applications. J Mater Sci: Mater Electron 34, 2061 (2023). https://doi.org/10.1007/s10854-023-11429-z
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DOI: https://doi.org/10.1007/s10854-023-11429-z