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Investigations on RF sputtered TiN thin films and Cu/TiO2/TiN devices for resistive switching memory applications

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Abstract

The growth of titanium nitride (TiN) thin films with bulk TiN conductivity for inert electrode applications remains a challenge, owing to various microstructural and compositional properties. Here, we report the fabrication of TiN thin films using optimised RF magnetron sputtering, where deposition conditions were tailored to achieve metal like electrical conductivity in TiN films. The TiN thin films deposited at 750 °C and in pure nitrogen ambient, revealed the minimum resistivity of ~ 26 µΩ cm, matching bulk TiN and suitable for electrode applications. The TiN thin films were used as bottom electrode to fabricate Cu/TiO2/TiN devices, which demonstrated repeatable non-volatile bipolar resistive switching characteristics with good endurance, retention, and multibit capability. The resistive switching and current conduction mechanisms of the device were explained considering Cu atom constituting filamentary switching, caused due to electrochemical metallization. The switching parameters and mechanism of TiO2 based devices using TiN bottom electrode were found to be similar to those observed in Pt based RRAM devices, demonstrating TiN films’ capability as an effective substitute for noble metal electrodes. This study may aid in the development of device grade metal like conducting TiN thin films, which are potential alternate to noble metal electrodes for resistive switching memory applications.

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Acknowledgements

The authors would like to thank Shri R. Kaul, Associate Director, Materials Science and Advanced Technology Group, and Head, Laser Materials Processing Division, RRCAT for his keen interest and helpful discussions.

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The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore, 452 013, India

    Vikas Kumar Sahu, Amit Kumar Das, R. S. Ajimsha & Pankaj Misra

  2. Laser & Functional Materials Division, Raja Ramanna Centre for Advanced Technology, Indore, 452 013, India

    Sushmita Bhartiya & Rashmi Singh

  3. UGC-DAE Consortium for Scientific Research, DAVV Campus, Indore, 452001, India

    Uday Deshpande

  4. Accelerator Physics & Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore, 452 013, India

    S. K. Rai

  5. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400 094, India

    Vikas Kumar Sahu & Pankaj Misra

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  1. Vikas Kumar Sahu
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Contributions

Conceptualization: VKS, PM; Methodology: VKS, PM; Formal analysis and investigation: VKS, AKD, RSA, SB, RS, UD, SKR, and PM; Writing—original draft preparation: VKS; Writing—review and editing: VKS, AKD, RSA, SB, RS, UD, SKR, and PM; Resources: RSA; Supervision: PM.

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Correspondence to Vikas Kumar Sahu.

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Sahu, V.K., Das, A.K., Ajimsha, R.S. et al. Investigations on RF sputtered TiN thin films and Cu/TiO2/TiN devices for resistive switching memory applications. J Mater Sci: Mater Electron 34, 1818 (2023). https://doi.org/10.1007/s10854-023-11235-7

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