Abstract
In the present study, we investigated the comparison of structural, optical, and electrical properties of Ga3+, Ti4+, and Bi5+-doped SnO2 thin films which are synthesized by the sol–gel spin coating method. The X-ray diffraction studies revealed that all deposited films exhibit the polycrystalline tetragonal rutile structure of SnO2 and are grown along with the (110) direction. It is found that the structural disordered was present in the SnO2 lattice with these dopants due to different ionic radii of dopant and host elements. The AFM micrographs have shown that the average grain size was decreased with the dopants. The pure SnO2 film showed above 85% of optical transmittance, and Ga3+, Ti4+, and Bi5+-doped SnO2 films exhibited 82, 76, and 75% respectively. Moreover, the bandgap energy value was decreased in Ga: SnO2 (3.72 eV), and Ti: SnO2 films (3.77 eV), whereas in Bi: SnO2 (4.21 eV) films the bandgap energy was increased as compared to the pure SnO2 film (3.91 eV). The lowest sheet resistance (Rsh) 38.6 Ω/Sq, and 38.8 Ω/Sq was found in Ti: SnO2 and Bi: SnO2 films, respectively, as compared to Ga: SnO2 film of 70.3 Ω/Sq. Finally, the figure of merit values was also calculated as a function of Ga, Ti, and Bi.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author upon reasonable request.
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The authors gratefully acknowledge the IISc Bangalore, India, and Osmania University, India, for providing the needful measurements.
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Akkera, H.S., Sivakumar, P. & Ashok, A. A comparative study on Ga3+, Ti4+, and Bi5+-doped SnO2 transparent conducting oxide thin films deposited by the spin coating method. J Mater Sci: Mater Electron 34, 119 (2023). https://doi.org/10.1007/s10854-022-09520-y
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DOI: https://doi.org/10.1007/s10854-022-09520-y