Abstract
Nickel oxide (NiO) is one of the most promising hole transport material in inverted perovskite solar cells due to its advantages including high chemical stability and wide bandgap, which could effectively transport holes and block electrons. However, the limited hole transport ability of NiO induce unsatisfied carrier separation and transfer at NiO/perovskite interface, so the inverted planar perovskite solar cell based on NiO is uncompetitive to the other devices. Here, we successfully fabricated a double-layer NiO hole transport layer, consisting by an inner layer of combustion-synthetic NiO film and an outer layer of hydrothermal process-synthetic NiO, for inverted planar perovskite solar cell. We confirmed that the double-layer NiO could improve charge transfer at NiO/perovskite interface, and decrease carrier recombination loss of the device. Comparatively, the device based on double-layer NiO HTL have achieved a higher fill factor and lower hysteresis effect, resulting in an increased power conversion efficiency (PCE) from 12.6 to 14.3%.
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We appreciate the financial support from Fundamental Research Funds for the Central Universities (2018QNA06).
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Funding was provided by Fundamental Research Funds for the Central Universities (Grant no. 2018QNA06).
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JS: Writing-review & editing, Project administration, Data curation. QQ: Writing-original draft, Sample characterization. XS: Sample characterization. YZ: Sample characterization, Project administration. YQ: Project managing, Manuscript revision.
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Song, J., Qiu, Q., Su, X. et al. Bilayer NiO hole-transporting film for inverted planar perovskite solar cell. J Mater Sci: Mater Electron 33, 26464–26473 (2022). https://doi.org/10.1007/s10854-022-09325-z
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DOI: https://doi.org/10.1007/s10854-022-09325-z