Abstract
Microrods of ZnO and Al, Sn-doped ZnO were synthesized by sol–gel hydrothermal procedure. The effect of dopants on the structural and optical properties were analyzed as well as the annealing effect is also investigated. Structural insight from the X-ray diffraction inferred hexagonal wurtzite structure and (002) preferential orientation of the synthesized grains. Scanning electron micrographs showed growth of the microrods on the seed layer in vertical alignment. Annealing the as-synthesized microrods resulted in improved crystallinity and led to shape change of the microrods from cylindrical to sharply pointed microrods. The presence of the Raman phonon modes E2high and E2low reflected hexagonal wurtzite structure. Transmittance of the ZnO microrods was increased on doping. Al single-doped ZnO and Al, Sn codoped ZnO exhibit bandgap narrowing whereas in the case of Sn single-doped ZnO bandgap broadening was noticed. Annealing widened the bandgap of ZnO and doped ZnO microrods. Observation of high optical transmittance of about 94% and energy bandgap of about 3.05 eV in Sn single-doped ZnO microrods implied their significance in optoelectronic device applications. PL spectra showed an intense violet emission along with the emission in blue, green and green-yellow bands. The doped ZnO microrods showed a blue-shift compared to that of the ZnO microrods sample. The chromaticity graph showed the emissions in the violet-blue region due to electron–hole recombination.
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All authors have equally contributed to conception and design of this study. Material preparation, data collection and analysis were performed by SM, BP, RAUR, DEJR. The first draft of the manuscript was written by SM which was improved by BP, RAUR, DEJR. All authors read and approved the final version of the manuscript.
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Mageswari, S., Palanivel, B., Rahman, R.A.U. et al. Preferential grain growth and impact of aluminum and tin doping on the physical properties of ZnO microrods. J Mater Sci: Mater Electron 33, 23306–23324 (2022). https://doi.org/10.1007/s10854-022-09057-0
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DOI: https://doi.org/10.1007/s10854-022-09057-0