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Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices

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Abstract

With the development of information technology, surface acoustic wave (SAW) devices are strongly required to exhibit higher integration, and lower insertion loss, as well as complementary metal oxide semiconductor (CMOS), processes compatibility. Aluminum nitride (AlN) is an excellent piezoelectric material that is compatible with CMOS processes; however, the insertion loss for AlN/Si SAW devices is high under conventional interdigital transducers (IDT) structure. In this work, AlN piezoelectric film-based floating electrode unidirectional transducers (FEUDT) structures are developed, and its propagation characteristics are simulated with the help of finite-element method (FEM). By Fourier transforming the corresponding time response, the insertion loss of the devices is calculated to be − 15.52 (forward) and − 22.94 dB (backward). According to simulation structure, FEUDT and IDT-structured devices with 3.6 μm wavelength are fabricated by electron beam lithography, and operating frequency of both devices reached 1.4 GHz, which is basically consistent with simulation results, and insertion loss of floating electrode unidirectional transducers structures is about 11 dB lower than that of conventional structure.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

This work was supported by Science and Technology Planning Project of Tianjin City (20ZYQCGX00070), Open project of state Key Laboratory of Functional Materials for Information (SKL202007), the Natural Science Foundation of Tianjin City (18JCzDJC30500 and 18JCYBJC85700), Research and Development Program in Significant Area of Guangdong Province (2020B0101040002), Tianjin Enterprise Science and Technology Commissioner Project (19JCTPJC56200), National Natural Science Foundation of China (Grant No. 62001326).

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Authors and Affiliations

  1. Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, 300384, Tianjin, China

    Lianqiu Li, Fang Wang, Kaixuan Li, Yemei Han, Kai Hu, Zheng Sun, Yangyang Xie, Dianyou Song, Lirong Qian & Kailiang Zhang

  2. Muroran Institute of Technology, 0508585, Hokkaido, Japan

    Deqing Kong

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  1. Lianqiu Li
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by LL, FW, KL, and KZ. The first draft of the manuscript was written by LL, and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript. LL, KL, KZ, FW, and YH: Conceptualization, DK, KH: Methodology, YX, ZS, LQ: Formal analysis and investigation,   LL, KL: Writing—original draft preparation, LL, KZ, FW: Writing—review and editing,  KZ, FW, YH: Funding acquisition DS: Resources, KZ: Supervision.

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Correspondence to Yemei Han or Kailiang Zhang.

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Li, L., Wang, F., Li, K. et al. Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices. J Mater Sci: Mater Electron 33, 22017–22026 (2022). https://doi.org/10.1007/s10854-022-08993-1

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