Abstract
Nano-modification is one of the effective methods to improve insulation characteristic of dielectric materials. In this paper, SiO2-modified oil-impregnated paper (OIP) is prepared to study space charge accumulation and trap level characteristic, and a bipolar charge transport model adding double trap level is established to simulate space charge accumulation. Space charge density and distribution range of SiO2-modified OIP are less than those of pure OIP, and 2.4 wt% and 3.8 wt% SiO2-modified OIP have space charge suppression. Moreover, surface charge decay rate and amplitude of SiO2-modified OIP are less than non-modified OIP, and those of 2.4 wt% SiO2-modified OIP are least. The trap level distribution is calculated according to the ISPD results, indicating that SiO2-modification decreases the shallow trap density, and increases the deep trap density and the trap level. The effect of SiO2-modification on deep trap level is larger than that on the shallow trap. The simulation results indicate that the charge transport model can simulate and explain the mechanism of space charge accumulation in SiO2-modified OIP.
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Funding
This study was supported by the Natural Science Foundation of Shandong Province (No. ZR2020ME206 & No. ZR2020QF064).
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All authors contributed to the study conception and design. Material preparation was performed by JZ, HL, and HY. The data collections were performed by YL and XD. The data analysis was performed by JZ, SL, and TD. The first draft of the manuscript was written by JZ and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Zhang, J., Liu, H., Yang, H. et al. Space charge characteristics of nano-SiO2-modified oil-paper insulation and numerical simulation. J Mater Sci: Mater Electron 33, 16251–16262 (2022). https://doi.org/10.1007/s10854-022-08518-w
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DOI: https://doi.org/10.1007/s10854-022-08518-w