Abstract
Zn, Bi, Co, Mn, Sb (ZBCMS) varistors were prepared by traditional solid-state sintering method. The influence of different sintering temperatures on the phase composition, microstructure, electrical properties and stability of electrical properties of ZBCMS varistors were studied by XRD, SEM, EDS, electric field–current density (E–J), and capacitance–voltage (C–V). The results show that with the sintering temperature from 920 to 1010 °C, the transformation of grain boundary phase, the volatilization of Bi, and the increase of pores are important reasons for the changes of microstructure and electrical properties of the samples. The impedance diagram analysis of samples sintered at different temperatures shows that the sintering temperature has little effect on the grain resistance of ZBCMS varistors, but has a significant effect on the grain boundary resistance. When the sintering temperature is 980 °C, the comprehensive properties of the samples reach the best, the highest density is 5.41 g/cm3, the maximum nonlinear coefficient is 50.59, the minimum leakage current density is 19.34 µA/cm2, and the breakdown field strength is 510.99 V/mm. Under the stress of 0.85 U1mA/12 h, the changes of breakdown voltage, nonlinear coefficient, and leakage current measured at room temperature are 0.71%, − 22.22%, and 37.29%, respectively.
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This study is supported by the National Natural Science Foundation of China (Grant No. 51802183).
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All the authors have made great efforts in this paper. Zhizhi Li, Jianke Liu, Jiaojiao Chen in terms of article writing and modify and test have done a lot of work. Zhizhi Li, Rongkai Xu and Shihua Liu did a great many experiments and prepared ZBCMS varistors with excellent electrical properties. Jinfeng Su, Li Li and Wenbin Cao provided great help in test.
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Liu, J., Li, Z., Liu, S. et al. The influence of sintering temperature on the structure and electrical properties of ZBCMS varistors. J Mater Sci: Mater Electron 33, 12104–12112 (2022). https://doi.org/10.1007/s10854-022-08170-4
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DOI: https://doi.org/10.1007/s10854-022-08170-4