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Study of pulsed laser deposited antimony selenide thin films

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Abstract

Growth of Sb2Se3 thin films via pulsed laser deposition technique using presynthesized ball-milled Sb2Se3 compound material as a source has been attempted in this work. Films were grown at room temperature and at a substrate temperature of 320 °C. The films grown at 320 °C showed a crystalline orientation along (020). Raman studies confirmed Sb2Se3 phase formation along with the presence of Sb2O3 for films grown at 320 °C that was followed by X-ray photoelectron spectroscopy analysis, which indicated the presence of oxide formation, wherein the identified valence states of Sb and Se confirmed the compositional stoichiometry. Optical transmittance studies yielding a bandgap of ~ 1.29 eV matched with reported values and the absorption values were of the order of ~ 106 cm−1 in the visible region. Scanning electron microscopy showed the morphology of Sb2Se3 grown at 320 °C having a surface devoid of cracks and the cross-section SEM showed the film having a thickness of ~ 1 µm. Energy-dispersive X-ray spectroscopy of films grown at 320 °C showed near stoichiometric compositional values with slight selenium deficiency. Resistivity was calculated using a two-point probe method that showed a value of ~ 6 × 108 Ω-cm for Sb2Se3 films grown at 320 °C. Hot point probe measurement showed the film to be a p-type semiconductor.

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The data that support the findings of this study are available on request from the corresponding author.

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Acknowledgements

The authors would like to acknowledge the financial support provided through DST-SERB (YSS) funding for carrying out this research work (Grant No. YSS/2015/00957). The authors would also like to thank SRM Institute of Science and Technology for providing central facilities such as XRD, Raman spectroscopy, UV-Vis-NIR spectroscopy and Nanotechnology Research Centre for providing FESEM and XPS facilities. The authors would also like to thank Dr S. Venkataprasad Bhat, Department of Physics, SRM Institute of Science and Technology for providing the facility for electrical measurements.

Funding

This work was supported by SERB (Science and Engineering Research Board), Government of India (Grant No. YSS/2015/00957).

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Authors and Affiliations

  1. Department of Physics and Nanotechnology, SRMIST, Kattankulathur, Tamil Nadu, 603203, India

    Alok Kumar Jain, C. Gopalakrishnan & P. Malar

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  1. Alok Kumar Jain
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  2. C. Gopalakrishnan
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  3. P. Malar
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Contributions

AKJ: Conceptualization, methodology, data acquisition, writing original draft preparation, CG: Data acquisition, conceptualization, reviewing. PM: Supervision, conceptualization, methodology, writing, reviewing.

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Correspondence to P. Malar.

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Jain, A.K., Gopalakrishnan, C. & Malar, P. Study of pulsed laser deposited antimony selenide thin films. J Mater Sci: Mater Electron 33, 10430–10438 (2022). https://doi.org/10.1007/s10854-022-08030-1

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