Abstract
Copper sulfide (CuS2) has been prepared by spray pyrolysis process. Structural and morphological properties of prepared sample were investigated by XRD and AFM. The X-ray diffraction showed that the structure of this film is cubic. The film surface was homogenous and dense. The UV absorbance and reflectance spectra show a high absorbance with gap energy of 1.87 eV estimated by Tauc’s model. The photoconductive studies reveal that the photocurrent versus light intensity and polarization follows a power low and linear trend, respectively. In addition, the CuS2 film had excellent stability. AC conductivity (Gac) reveals the semiconductor behavior and the activation energy is estimated to be 0.5 eV. It is also obvious that the conductance AC follows jonscher’s universal power law. The exponent “s” decreases with temperature increase, showing that the conduction phenomena is related to Correlated Barrier Hopping (CBH). The imaginary and real impedance parts are plotted in Nyquist diagrams and an equivalent circuit is deduced. Consequently, the prepared CuS2 film is suitable for optoelectronic applications, such as solar cells and photodetector.
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References
B. Rezig, S. Duchemin, F. Guastavino, Solar Energy Mater. 2, 53 (1979)
H.K. Sadekar, N.G. Deshpande, Y.G. Gudage, A. Ghosh, S.D. Chavhan, S.R. Gosavi, R. Sharma, J. Alloy. Compd. 453, 519 (2008)
I.W. Lenggoro, Y.C. Kang, T. Komiya, K., Okuyama, N. Tohge (1998) Japanese J. Appl. Phys. 37: e288
R.R. Ahire, N.G. Deshpande, Y.G. Gudage, A.A. Sagade, S.D. Chavhan, Sens. Actuators, A 140(2007), 207 (2007)
N. Savelli, J. Bougnot J, 1979 Topics. Appl. Phys.31 213
J. Black, E. Conwell, L. Seigle, C. Spencer, J. Phys. Chem. Sol. 2, 240 (1957)
K. Nose, Y. Soma, T. Omata, S.O. Yao-Matsuo, Chem. Mater. 21, 2607 (2009)
T.A. Bither, R.J. Bouchard, W.H. Cloud, P.C. Dokohue, W.J. Siemoks, Inorg. Chem. 7, 2208 (1968)
J. Qiu, Z. Jin, W. Wu, X.L. Xiao, 2006 Thin Solid Films510: e1
Y. Zhang, J. Tian, H. Li, L. Wang, X. Qin, A. Asiri, A.A. Youbi, X. Sun, Langmuir 28(2012), 12893 (2012)
J. Xu, J. Zhang, C. Yao, H. Dong. J. Chil, J. (2013) J. Chilean Chem. Soc. 58: e1722
S. Lu, W. Hu, X. Hu, J. Mater. Chem. 9, 1387–1395 (2021)
Y. He, X. Zhang, S. Wang, J. Meng, Y. Sui, Fu. Wei, J. Qi, Q. Meng, Y. Ren, D. Zhuang,, 2020 J. Alloys and Compounds 847 156312
M. Saha, B. Marí, M. Molla, Thin Solid Films 517, 2202 (2009)
A.J. Varkey, 1990 lnt. J. Mater. Prod. Technol. 5 264
W.M. Du, X.F. Qian, J. Yin, Q. Gong, Chem. Eur. J. 13, 8840 (2007)
K.J. Wang, G.D. Li, J.X. Li, Q. Wang, J.S. Chen, Cryst. Growth Des. 7, 2265 (2007)
J. Möller, C.H. Fischer, H.J. Muffler, R. Könenkamp, I. Kaiser, C. Kelch, M.C. Lux-Steiner, Thin Solid Films 361, 113 (2000)
T. Yukawa, K. Kuwabara, K. Koumoto, Thin Solid Films 286, 151 (1996)
K. Ellmer, J. Hinze, J. Klaer, Thin Solid Films 413, 92 (2002)
A.L. Abdelhady, K. Ramasamy, M.A. Malik, P. O’Brien, S.J. ;Haigh, J. Raftery. 2011 J. Mater. Chem. 21 17888
C. Liu, H. Yang, C.Li. Song, W. Li, K. He, X.C. Ma, L. Wang, Q.K. Xue, 2018 Chinese Phys. Lett. 35 027303
J.C.W. Folmer, F. Jellinek, G.H.M. Calis, J. Solid State Chem. 72, 137 (1988)
D. C. German, J.A. García-Valenzuela, M. Martínez-Gila, b, G. S. Campos , Z. Montiel-González d, M. Sotelo-Lerma , M. Cota-Leal, 2019 Applied Surface Science, 481 281
Y. Yin, J. Coulter, C. J. Ciccarino, and P. Narang, 2020 Phys. Rev. Mater. 4 104001
M. Cota-Leal, D. Cabrera-German, M. Sotelo-Lerma, M. Martínez-Gil, J.A. GarcíaValenzuela, Mater. Sci. Semicond. Process. 95, 59 (2019)
H. Ueda, M. Nohara, K. Kitazawa, H. Takagi, A. Fujimori, T. Mizokawa, T. Yagi, 2002 Phys. Rev. B. 65 155104
B.D. Cullity, Elements of X-ray Diffraction, Second edition, Addison-Wesley, Reading ,MA, USA, pp 284.
A. D. Dhondge1, S. R. Gosavi, N.M. Gosavi, C. P. Sawant3, A. M. Patil, A. R. Shelke, N. G. Deshpande, 2015 World Journal of Condensed Matter Physics, 5 1
O. Z. Tajrishi, M. Taghizadeh, A. D. Kiadehi, 2018 International journal of hydrogen energy, 43 14103
S. Chander, M.S. Dhaka 2018 Results in Physics, 8 1131
K. Ravichandran, P. Philominathan, Sol. Energy 82, 1062 (2008)
G.B. Kamath, C.M. Joseph, C.S. Menon, Mater. Lett. 57, 730 (2002)
M.G. Sandoval-Paz, M. Sotelo-Lerma, J.J. Valenzuela-Jauregui, M. Flores-Acosta, R. Ramirez-Bon, Thin Solid Films 472, 5 (2005)
Y. Akaki, H. Komaki, K. Yoshino, T. Ikari, J. Materials sciences: Materials en Electronics 14, 291 (2003)
Ching-Hwa Ho,Yi-Ping Wang, Ying-sheng Huang, 2012 Applied Physics Letters 100 131905
Z. Sebouia, M. Ajili, N. Jebbari, N. Kamoun Turki, 2013 Eur. Phys. J. Appl. Phys. 62 30302
P.J.L. Herve, L.K.J. Vandamme, 1995 J. Appl. Phys. 77, 5476 5476
L. Li, P.S. Lee, C.Y. Yan, T.Y. Zhai, X.S. Fang, M.Y. Liao, Y. Koide, Y. Bando, D. Golberg, Adv. Mater. 22, 5145 (2010)
B. Yuan, X.J. Zheng, Y.Q. Chen, B. Yang, T. Zhang, Solid State Electron. 55, 49 (2011)
R.L. Gao, H.W. Yang, Y.S. Chen, J.R. Sun, Y.G. Zhao, B.G. Shen, J. Alloy. Compd. 591, 346 (2014)
A. Ben Jazia Kharrat, N. Moutia, K. Khirouni, W. Boujelben, 2018 Mater. Res. Bull. 105 75
A.K. Jonscher, Nature 267, 673 (1977)
D.K. Pradhan, B.K. Samantary, R.N.P. Chaudhary, A.K. Thakur, Mater. Sci. Eng. 116, 7 (2005)
F. Salman, Turk. J. Phys. 28, 41 (2004)
A. Rai, A.K. Thakur, Effect of co-substitution on structural, optical, dielectric and magnetic behavior of LaFeO3. J. Alloys Compd. 695, 3579 (2017)
B.N. Parida, P.R. Das, R. Padhee, R.N.P. Choudhary, J. Alloys Compd. 540, 267 (2012)
H. Rahmouni, R. Jemai, M. Nouiri, N. Kallel, F. Rzigua, A. Selmi, K. Khirouni, S. Alaya, J. Cryst. Growth 310, 556 (2008)
R.M. Hill, A.K. Jonscher, J. Non-Cryst, Solids 32, 53 (1979)
A. Mhamdi, B. Ouni, A. Amlouk, K. Boubaker, M. Amlouk, J. Alloy. Compd. 582, 810 (2014)
K.K. Srivastva, A. Vohra, Philos. Mag. 61, 201 (1990)
P. Zoltowski, J. Electroanal. Chem. 443, 149 (1998)
J.B. Jorcin, M.E. Orazem, N. Pebere, B. Tribollet, Electrochim. Acta 51, 1473 (2006)
B.B. Nayak, H.N. Acharya, Thin Solid Films 122, 93 (1984)
M.M. El-Nahass, H.A.M. Ali, Solid State Commun. 152, 1084 (2012)
A.K. Jonscher, J. Phys. D. Appl. Phys. 13, 137 (1980)
Acknowledgements
This research was partly supported by the projects HP-NANOBIO Project PID2019-111163RB-I00, granted by Spanish Ministry of Science, and Project CIVP18A3940, granted by Fundación Ramón Areces, Spain. CVV thanks Xunta de Galicia (Spain) for the AEMAT (ED431E-2018/08) Strategic Partnership and the use of RIAIDT-USC analytical facilities. CVV belongs to the Galician Competitive Research Group ED431C-2017/22, co-funded by FEDER.
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Conception and design of study: N. Bouguila and Y. Bchiri. Acquisition of data: N. Bouguila, Y. Bchiri, M. Kraini, R. Souissi, and N. Hafienne. Analysis and/or interpretation of data: N. Bouguila, Y. Bchiri, M. Kraini, R. Souissi, C. Vasquez-Vasquez, and S. Alaya. Drafting the manuscript: N. Bouguila, Y. Bchiri, R. Souissi, and N. Hafienne. Revising the manuscript critically for important intellectual content: C. Vasquez-Vasquez and S. Alaya. Approval of the version of the manuscript to be published: N. Bouguila Y. Bchiri, M. Kraini, R. Souissi, N. Hafienne, C. Vasquez-Vasquez, and S. Alaya.
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Bouguila, N., Bchiri, Y., Kraini, M. et al. Investigation of some physical and photoconductive properties of sprayed CuS2 film. J Mater Sci: Mater Electron 33, 3810–3821 (2022). https://doi.org/10.1007/s10854-021-07572-0
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DOI: https://doi.org/10.1007/s10854-021-07572-0