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Comparison of dielectric characteristics for metal–semiconductor structures fabricated with different interlayers thicknesses

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Abstract

The dielectric properties of MS structures without interlayer and with Al2O3 interlayer have been investigated in a wide frequency range under forward and reverse biases. In this context, parameters such as loss tangent (tanδ), dielectric constant (ε′), dielectric loss (ε′′) were calculated from the capacitance and conductivity data. The observed changes in dielectric parameters have been attributed to the coupling mechanisms between charges placed at the interface states, surface and bipolar polarization, and traps. The experimental results clearly indicate that the values of ε′, ε′′ and tanδ vary significantly with frequency and voltage. That is, the thickness of the interlayer changes considerably the dielectric properties of the structure. As a result, it has been revealed that the desired device properties can be achieved by varying the thickness of the interlayers.

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Funding

This project was supported by the Karabuk University Scientific Research Project with KBÜ-BAP-18-YL-187 Project Number.

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Authors and Affiliations

  1. Department of Electrical and Electronics Engineering, Faculty of Engineering, Karabuk University, 78050, Karabuk, Turkey

    Bilal Arslan

  2. Department of Electrical Engineering, Faculty of Technology, Karabük University, 78050, Karabük, Turkey

    Serhat Orkun Tan & Hüseyin Tecimer

  3. Department of Physics, Faculty of Sciences, Gazi University, 06560, Ankara, Turkey

    Şemsettin Altındal

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  1. Bilal Arslan
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  2. Serhat Orkun Tan
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  3. Hüseyin Tecimer
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  4. Şemsettin Altındal
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Correspondence to Serhat Orkun Tan.

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Arslan, B., Tan, S.O., Tecimer, H. et al. Comparison of dielectric characteristics for metal–semiconductor structures fabricated with different interlayers thicknesses. J Mater Sci: Mater Electron 32, 26700–26708 (2021). https://doi.org/10.1007/s10854-021-07047-2

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  • DOI: https://doi.org/10.1007/s10854-021-07047-2

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