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Effects of Ar+ irradiation on the performance of memristor based on single-crystalline LiNbO3 thin film

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Abstract

Memristor has become the most promising building block for neuromorphic computing. The memristors based on single-crystalline oxide film exhibit some advantages, such as the uniformity of device property. But currently the high energy consumption of memristor still hinders its future application. In this work, we used Ar+ irradiation to modulate the performance of memristor based on single-crystalline LiNbO3 (LN) thin film. During the Ar+ irradiation, the reduction of thin film thickness and the modulation of oxygen vacancies were observed simultaneously. The electroforming voltage and operation voltage of the memristors were reduced effectively, which makes the memristor become more energy-efficient. After Ar+ irradiation, the advantage in uniformity of device properties still maintained. The memristors based on Ar+ irradiated LN thin film also showed synaptic plasticity and self-rectifying property. The etching effect and preferential sputtering effect of Ar+ irradiation were observed and investigated, respectively. The synergy between the two effects was also discussed. This work provides the method to overcome the obstacle of application of memristor based on single-crystalline oxide thin film to neuromorphic computing, which makes the advantages of memristor based on single-crystalline oxide thin film, such as the uniformity of device property, fully used of.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was supported by China National Key Research and Development Plan Project (2017YFB0406402), and the National Natural Science Foundation of China (Nos. 52073041, 51772044, 51602039).

Funding

China National Key Research and Development Plan Project (2017YFB0406402); National Natural Science Foundation of China (No. 52073041); National Natural Science Foundation of China (No. 51772044); National Natural Science Foundation of China (No. 51602039).

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Authors and Affiliations

  1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Chuangui Wu, Jiejun Wang, Shitian Huang, Wen Luo & Wanli Zhang

  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Xinqiang Pan, Wenbo Luo, Yao Shuai, Chuangui Wu & Wanli Zhang

Authors
  1. Qin Xie
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  2. Xinqiang Pan
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  3. Wenbo Luo
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  4. Yao Shuai
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  5. Chuangui Wu
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  6. Jiejun Wang
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  7. Shitian Huang
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  8. Wen Luo
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  9. Wanli Zhang
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Contributions

QX contributed to investigation and writing—original draft. XP contributed to methodology, writing—review and editing. WL contributed to methodology and review. YS contributed to Supervision. CW contributed to conceptualization. JW contributed to data curation. SH contributed to data curation. WL contributed to data curation. WZ contributed to project administration.

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Correspondence to Xinqiang Pan or Wenbo Luo.

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Xie, Q., Pan, X., Luo, W. et al. Effects of Ar+ irradiation on the performance of memristor based on single-crystalline LiNbO3 thin film. J Mater Sci: Mater Electron 32, 20817–20826 (2021). https://doi.org/10.1007/s10854-021-06595-x

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  • DOI: https://doi.org/10.1007/s10854-021-06595-x

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