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Tunable dielectric properties of sol–gel derived (Pb0.35, Sr0.65) (Zr0.5, Ti0.5)O3 thin films for microwave application

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Abstract

Ferroelectric (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 material with Curie temperature below room temperature was prepared by solution-gelation method on platinized silicon substrates. Structural and morphological evolution of the spin-coated films on Pt/ZrO2/SiO2/Si substrates as a function of annealing temperature were studied by X-ray diffraction and atomic force microscopy, respectively. Fully crystallized film with perovskite structure was obtained at an annealing temperature of 600 °C. Root-mean-square roughness of the 300 nm film was around 4.5 nm, manyfold higher than the underlying Pt substrate (~ 1 nm). Electrical properties of the fully crystallized films were studied as functions of frequency and temperature with an impedance analyzer. Dielectric constant and loss tangent were around 200 and 0.02, respectively, at a frequency 100 kHz. Dielectric tunability of the films with bias voltage and frequencies was studied and 45% tunability obtained at 500 kV/cm. The quality factor or the figure of merit of the (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 films were determined from the tunability/loss tangent ratio and found to be 16 at 500 kV/cm.

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Acknowledgements

Financial support from the Science and Engineering Research Board (SERB), Department of Science and Technology (DST), Govt. of India for the project under the Core Research Grant CRG/2018/003539 is gratefully acknowledged.

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Authors and Affiliations

  1. School of Chemical Engineering and Physical Sciences, Lovely Professional University, Jalandhar-Delhi G.T. Road, Phagwara, Punjab, 144411, India

    Vijaya Bhasker & Reji Thomas

  2. School Electrical Engineering and Electronics, Lovely Professional University, Jalandhar-Delhi G.T. Road, Phagwara, Punjab, 144411, India

    Urvashi Sharma

  3. School of Computer Science and Engineering, Lovely Professional University, Jalandhar Delhi G.T. Road, Phagwara, Punjab, 144411, India

    Gulshan Kumar

  4. Division of Research and Development, Lovely Professional University, Jalandhar Delhi G.T. Road, Phagwara, Punjab, 144411, India

    Gulshan Kumar & Reji Thomas

  5. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India

    Ashok Kumar

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  1. Vijaya Bhasker
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  2. Urvashi Sharma
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Correspondence to Reji Thomas.

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Bhasker, V., Sharma, U., Kumar, G. et al. Tunable dielectric properties of sol–gel derived (Pb0.35, Sr0.65) (Zr0.5, Ti0.5)O3 thin films for microwave application. J Mater Sci: Mater Electron 32, 19095–19101 (2021). https://doi.org/10.1007/s10854-021-06426-z

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  • DOI: https://doi.org/10.1007/s10854-021-06426-z

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