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Sonochemical exfoliation, characterization and photoresponse of MoS0.5Se1.5 nanosheets

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Abstract

Recently, transition metal dichalcogenide have gained significant attention from researchers due to their extraordinary optoelectronic properties. Here we evaluate the photodetection properties of highly crystalline nanosheets of MoS0.5Se1.5 synthesized by high yield sonochemical exfoliation technique. Constituent elements have been verified by EDAX. The results of powder XRD shows highly crystalline nature of nanosheets and XRD pattern is well indexed to 2H-hexagonal lattice structure with P63/mmc space group. Transmission Electron Microscopy is conducted in order to find the structural details for the nanosheets of MoS0.5Se1.5. Picked Field Electron Diffraction pattern indicated the highly crystalline existence of the nanosheets. Drop casting method was utilized to deposit thin film of MoS0.5Se1.5 nanosheets on ITO substrate. Efforts have been made to study the photoresponse of MoS0.5Se1.5 thin film using 670 nm light having power intensity 3mv/cm2. The intensify photoresponsivity of 1.62 mA/W and specific detectivity of 1.3*108 Jones is observed. The present findings suggest effective way to tune bandgap for producing high-performance optoelectronic device.

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Authors and Affiliations

  1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120, India

    Nashreen F. Patel, Sanjay A. Bhakhar, G. K. Solanki, K. D. Patel, V. M. Pathak, Chetan K. Zankat, Jagrutiba D. Gohil & Shubham U. Gupta

  2. Department of Physical Science, P. D. Patel institute of Applied Sciences, Charotar University of Science and Technology, Changa, 388421, India

    Pratik M. Pataniya

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  1. Nashreen F. Patel
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  2. Sanjay A. Bhakhar
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  3. G. K. Solanki
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  4. K. D. Patel
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Correspondence to Nashreen F. Patel or G. K. Solanki.

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Patel, N.F., Bhakhar, S.A., Solanki, G.K. et al. Sonochemical exfoliation, characterization and photoresponse of MoS0.5Se1.5 nanosheets. J Mater Sci: Mater Electron 32, 11805–11812 (2021). https://doi.org/10.1007/s10854-021-05810-z

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