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Nonvolatile resistive switching characteristics based on Ni–Al LDHs and its electronic synapse application

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Abstract

Future artificial intelligence circuits will require expandable electronic synapses with extremely high bit density and computing speed. In this regard, the nanostructure of two-dimensional materials achieves the goal and provides device scalability in both horizontal and vertical dimensions. In this work, we report the nonvolatile bipolar resistive switching characteristics of Ni–Al layer double hydroxide (LDH)-adsorbed thiadiazole memristors. The Ni–Al LDH-adsorbed thiadiazole memristors implement a progressive reduction process and can be used to simulate the “learning” and “forgetting” functions of biological synapses. At the same positive and negative voltage pulse width, multiple resistance stages can be observed for continuous pulse number. In addition, the application of pulse train operation scheme is an effective method to control the simulated synaptic devices during the reset process, which helps understand the nature of the evolution of conductive nanofilaments.

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Acknowledgements

This work is supported by National Natural Science Foundation of China (Nos. 62065001, 61761048), and partially supported by Yunnan Fundamental Research Projects (Grant No. 202001BA070001-060).

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Authors and Affiliations

  1. School of Engineering, Dali University, Dali, China

    Enming Zhao, Guangyu Liu, Xiaodan Liu, Chen Wang, Xiaodong Zhu, Yanting Yang, Shuo Liu & Yi Huang

  2. School of Electrical and Information Engineering, Yunnan Minzu University, Kunming, China

    Chuanxi Xing

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  1. Enming Zhao
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Zhao, E., Liu, G., Xing, C. et al. Nonvolatile resistive switching characteristics based on Ni–Al LDHs and its electronic synapse application. J Mater Sci: Mater Electron 32, 9938–9945 (2021). https://doi.org/10.1007/s10854-021-05651-w

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