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Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film

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Abstract

The effects of Mg35Sb65 layer on the thermal stability and thickness change rate of Ge2Sb2Te5 in superlattice films were studied. Compared with monolayer Ge2Sb2Te5 films, Mg35Sb65/Ge2Sb2Te5 films had higher resistance and crystallization temperature. The thermal stability and data retention capability were improved significantly. The fundamental reason of the change of film resistance was explained from the change of energy band gap. According to the reliability of phase change memory devices, the thickness change rate of thin films was analyzed in detail.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 11974008 and 11774438) and Changzhou key laboratory of high technology research (CM20173002) and the Opening Project of Institute of Semiconductors, Chinese Academy of Sciences (KLSMS-1805), and practice Innovation Program of Jiangsu Province (SJCX19_0712).

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Authors and Affiliations

  1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213000, China

    Song Sun, Yifeng Hu & Xiaoqin Zhu

  2. State-Key Laboratory of Optoelectronic Materials and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China

    Tianshu Lai

  3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Yifeng Hu

  4. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Yifeng Hu

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  1. Song Sun
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  2. Yifeng Hu
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  4. Xiaoqin Zhu
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Correspondence to Song Sun or Yifeng Hu.

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Sun, S., Hu, Y., Lai, T. et al. Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film. J Mater Sci: Mater Electron 32, 6408–6413 (2021). https://doi.org/10.1007/s10854-021-05358-y

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  • DOI: https://doi.org/10.1007/s10854-021-05358-y

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