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Experimental and theoretical investigation of bifurcated wafer warpage evolution in the wafer level packaging processes

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Abstract

Wafer warpage, which mainly originated from thermal mismatch between the materials, has become serious in wafer level packaging (WLP) as larger diameter and thinner wafers are required currently. In this paper, three-dimensional wafer warpage profile and the warpage evolution during typical fan-in WLP processes including wafer thinning process were characterized in situ. Special attention was paid to the bifurcated phenomenon. Prior to the wafer thinning process, the wafer deformed into a bowl shape which was caused by polyimide (PI) curing. A distinct bifurcation behavior appeared and the wafer warped into a cylindrical shape when the wafer was thinned below 270 μm. This bifurcation behavior was systematically analyzed by theoretical analysis and finite element analysis (FEA). Equivalent material model method and perturbation method were employed to simplify the FEA model and incur the bifurcation behavior, respectively.

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Acknowledgements

The authors are grateful to Prof. Le Luo and Gaowei Xu from State Key Laboratory of Transducer Technology, SIMIT, China Academy of Sciences (CAS), for their help in theoretical calculation, wafer warpage measurement and useful discussions.

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  1. Strategic Support Force Information Engineering University, Zhengzhou, 450001, China

    Chunsheng Zhu

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  1. Chunsheng Zhu
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Correspondence to Chunsheng Zhu.

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Zhu, C. Experimental and theoretical investigation of bifurcated wafer warpage evolution in the wafer level packaging processes. J Mater Sci: Mater Electron 31, 16531–16538 (2020). https://doi.org/10.1007/s10854-020-04207-8

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  • DOI: https://doi.org/10.1007/s10854-020-04207-8

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