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Hole-mediated ferromagnetism in GaN doped with Cu and Mn

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Abstract

We present a cathodoluminescence (CL) and superconducting quantum interference device (SQUID) magnetometry study of the generation of ferromagnetism (FM) in GaN doped with non-magnetic (copper) and magnetic (manganese) impurities. Our results suggest that p–d hybridization between Cu and N ions promotes FM in GaN:Cu, and that an exchange interaction between the Cu2+ (d9) orbitals and the t2g anti-bonding orbitals of Mn2+ ions generates FM in GaN:Cu and GaN:Mn. Besides that, the exchange interaction is mediated by holes, created by the acceptor nature of the impurities Cu2+ and Mn2+, and of the point-defects-type gallium vacancies (VGa) present in samples. For this study, we synthesized undoped GaN, GaN:Cu, and GaN:Mn samples by thermal evaporation onto Ni0.8Cr0.2/Si substrates in a horizontal furnace operated at low vacuum. Energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) measurements confirmed that the obtained samples consisted of GaN without residual oxide phases. XPS measurements also revealed the coexistence of Cu+ and Cu2+ ions in the GaN:Cu sample, and Mn2+ in the GaN:Mn sample. CL spectra from Cu and Mn-doped GaN samples showed that doping generates a relative intensity enhancement of two bands centered at 2.60 and 3.00 eV, associated with the formation of VGa in GaN. Magnetization–applied field (M–H) curves of the GaN, GaN:Cu, and GaN:Mn samples revealed a FM behavior at room temperature.

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Acknowledgements

This work was supported by a Grant from Conacyt (No. 284667), and a Grant from PAPIIT-UNAM (No. IN101917). The technical support of E. Aparicio and Dr. Roberto Escudero is greatly appreciated. M. I. Perez Montfort corrected the English version of the manuscript. DM acknowledges the financial support by MINECO/FEDER/M-ERA.Net Projects RTI2018-097195-B-I00 and M-ERA-PCIN-2017-106.

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  1. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, 22800, Ensenada, Baja California, Mexico

    G. Guzmán & M. Herrera

  2. Departamento de Física de Materiales, Facultad de CC. Físicas, Universidad Complutense de Madrid, 28040, Madrid, Spain

    D. Maestre

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  1. G. Guzmán
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Guzmán, G., Maestre, D. & Herrera, M. Hole-mediated ferromagnetism in GaN doped with Cu and Mn. J Mater Sci: Mater Electron 31, 15070–15078 (2020). https://doi.org/10.1007/s10854-020-04070-7

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