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Growth and characterization of ZnSe nanocrystals synthesized using solvothermal process

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Abstract

ZnSe nanocrystals with zinc blende structure are synthesized by solvothermal process at 1-h, 3-h and 5-h reaction times in a mixed solvent of hydrazine hydrate [H6N2O], ammonia [NH3] and de-ionized water. Zinc acetate [(CH3COO)2 Zn; 2H2O] and sodium selenite [Na2SeO3] are, respectively, used as precursors for zinc and selenium ions. X-ray diffraction (XRD) and scanning electron microscope (SEM) study show that the crystallinity and the chemical purity of the compound improve with increase in reaction duration. SEM images show formation of bulk rod-shaped ZnO particles in samples prepared at 1-h and 3-h reaction times, which is absent in the 5-h sample. TGA measurements also show that the ZnSe nanocrystals synthesized in this process have high purity and the nanocrystals prepared for longer duration have improved purity as well as higher thermal stability. In Raman measurements, nanocrystalline nature such as surface phonon (SP) mode and phonon line width broadening are observed. The observed variation of the relative intensities of the phonon modes follows the differences in the size of nanocrystals, in which the relative strength of the transverse optical (TO) phonon mode is found to increase with nanocrystals size and the SP phonon relative strength on the other hand decreases.

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Acknowledgements

The authors acknowledge Central Instrumentation Facility (CIF) and Center for Energy, IIT Guwahati, for SEM, FESEM and TGA measurements.

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Authors and Affiliations

  1. Physical Sciences Research Centre, Department of Physics, Pachhunga University College, Aizawl, Mizoram, 796 001, India

    Lalhriat Zuala

  2. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, 781 039, India

    Pratima Agarwal

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  1. Lalhriat Zuala
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Correspondence to Lalhriat Zuala.

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Zuala, L., Agarwal, P. Growth and characterization of ZnSe nanocrystals synthesized using solvothermal process. J Mater Sci: Mater Electron 31, 14756–14766 (2020). https://doi.org/10.1007/s10854-020-04039-6

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