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Dielectric temperature stability and energy storage performance of B-site Sn4+-doped BNKBST ceramics

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Abstract

The 0.65Bi0.5Na0.25K0.25TiO3–0.35Bi0.2Sr0.7Ti1−xSnxO3 (BNKBST-xSn) ceramics were synthesized via a solid-phase reactive sintering technique. The effects of doping Sn4+ ions on the energy storage, dielectric, ferroelectric properties and microstructure characteristics for BNKBST ceramics were systematically studied. Remarkably, BNKBST-0.02Sn exhibits a superior dielectric temperature stability, manifested as the change rate for dielectric constant ∆ε/ε150°C is smaller than 15% during a very wide temperature range of 30–400 °C. In addition, BNKBST-0.02Sn ceramic achieves a high energy storage density Wrec = 0.81 J/cm3 (under the electric field 80 kV/cm) with an outstanding energy storage efficiency 89.5%, which make it reasonable to be applied in dielectric capacitors due to its excellent dielectric thermal stability and energy storage properties. The electrical conductivity behaviors of BNKBST-xSn were also analyzed with the assistance of impedance spectroscopy.

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Acknowledgements

This work has been supported by the National Natural Science Foundation (51672220, 51902258), Fundamental Research Funds for the Central Universities of NPU (3102019GHXM002), State Key Laboratory of Solidification Processing Project (2019-TZ-04) of China, China Postdoctoral Science Foundation (2019M653729), Shaanxi Province Postdoctoral Science Foundation (2017BSHEDZZ07), and the Natural Science Foundation of Shaanxi Province (2019JQ-621). We would also like to thank the Analytical & Testing Center of Northwestern Polytechnical University.

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  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, 710072, China

    Guangzhi Dong, Huiqing Fan, Yuxin Jia & Huan Liu

  2. Institute for Superconducting and Electronic Materials, Australia Institute of Innovative Materials, University of Wollongong, Wollongong, 2522, Australia

    Guangzhi Dong

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  1. Guangzhi Dong
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Dong, G., Fan, H., Jia, Y. et al. Dielectric temperature stability and energy storage performance of B-site Sn4+-doped BNKBST ceramics. J Mater Sci: Mater Electron 31, 13620–13627 (2020). https://doi.org/10.1007/s10854-020-03918-2

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