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Ag-doped WO3 nanostructure films for organic volatile gas sensor application

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Abstract

A novel gas sensor based on Ag-doped WO3 nanostructures was successfully deposited on a glass substrate via electron beam evaporation technique. The microstructure, surface morphology, chemical composition, crystal structure, and optical properties of the pure and Ag-doped WO3 nanostructure thin films were studied by scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-ray diffractometer, and photoluminescence spectroscopy (PL). Gas-sensing tests revealed that the 15 wt% Ag-doped WO3 nanostructure possess excellent gas-sensing performance for ethanol. The sensitivity of the material toward 100 ppm ethanol was as high as 65 at an optimum operating temperature of 300 °C, which is higher than that of undoped WO3. The response/recovery times 9 s/11 s, great selectivity and outstanding long-term stability was obserevd for the 15 wt% Ag doped WO3 nanostructure sensor. The improvement of ethanol-sensing performance is related to the active space charge regions around the interface of Ag particles and WO3.

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Authors and Affiliations

  1. Department of Physics, Vikrama Simhapuri University P.G. Centre, Kavali, Andhra Pradesh, 524201, India

    G. Adilakshmi, R. Subba Reddy & A. Sivasankar Reddy

  2. Department of Physics, Sri Venkateswara University, Tirupati, Andhra Pradesh, 517502, India

    P. Sreedhara Reddy

  3. Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju, Republic of Korea

    Ch. Seshendra Reddy

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  1. G. Adilakshmi
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  2. R. Subba Reddy
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  3. A. Sivasankar Reddy
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  4. P. Sreedhara Reddy
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  5. Ch. Seshendra Reddy
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Correspondence to A. Sivasankar Reddy.

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Adilakshmi, G., Reddy, R.S., Reddy, A.S. et al. Ag-doped WO3 nanostructure films for organic volatile gas sensor application. J Mater Sci: Mater Electron 31, 12158–12168 (2020). https://doi.org/10.1007/s10854-020-03762-4

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  • DOI: https://doi.org/10.1007/s10854-020-03762-4

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