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Effect of Ba(Mg1/3Nb2/3)O3 buffer layer on electrical properties of PZT-based films

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Abstract

Pb[Nbx(Zr0.52Ti0.48)1−x]O3 (PNZT) thin films were deposited on Pt/Ti/SiO2/Si(100) by the sol–gel method using Ba(Mg1/3Nb2/3)O3 (BMN) buffer layer. The effects of Nb doping and BMN buffer layer on fatigue endurance and ferroelectric properties of PZT thin film were investigated. The optimum ferroelectric properties of PNZT film: Pr = 43.4 µC/cm2, Ec = 29.3 kV/cm and J = 2.73 × 10− 6 A/cm2 were obtained by doping 3 mol% Nb in PZT film. After 1010 cycles, the Pr of PZT film reduces by 50%. After 1012 cycles, the Pr of PNZT film only reduces by 20%. The reason for enhanced ferroelectric properties and fatigue endurance of PNZT thin film is that Nb doping effectively prevents the generation of oxygen vacancies. The Pr of the PNZT/BMN film remains 85% after 1010 cycles, and it remains stable even till to 1012 cycles. Moreover, the leakage current of PNZT/BMN film is 5.40 × 10− 7 A/cm² under 100 kV/cm electric field, which is about one order of magnitude lower than that of PNZT (2.73 × 10− 6 A/cm²). The effect of BMN on improving the fatigue endurance and ferroelectric properties of PNZT thin film could be ascribed to blocking of Pt diffusion at the PNZT–Pt interface. Moreover, PNZT/BMN film with excellent ferroelectric and fatigue endurance shows the promising application in FeRAM.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (No. 51572205), National Natural Science Foundation of China (No. 51802093), the Equipment Pre-Research Joint Fund of EDD and MOE (No. 6141A02022262), the Fundamental Research Funds for the Central Universities (WUT: 2018III019) and the Fundamental Research Funds for the Central Universities (2019-zy-007).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, People’s Republic of China

    Yajie Shao, Jing Zhou, Wen Chen, Jie Shen & Zhiqing Wang

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  1. Yajie Shao
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  2. Jing Zhou
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  3. Wen Chen
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Correspondence to Jing Zhou.

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Shao, Y., Zhou, J., Chen, W. et al. Effect of Ba(Mg1/3Nb2/3)O3 buffer layer on electrical properties of PZT-based films. J Mater Sci: Mater Electron 31, 9928–9936 (2020). https://doi.org/10.1007/s10854-020-03538-w

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