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Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor

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Abstract

In this study, we investigated the effects of applied voltage and frequencies on the electrical properties of Al/(Er2O3(150 nm)/SiO2(20 nm)/n-Si)/Al MOS capacitor. The e-beam deposited Er2O3/SiO2 films were annealed at 650 °C in N2 ambient and the crystal and phase identification of the films were confirmed by X-ray diffractometry. The capacitance–voltage (C–V) and the conductance–voltage (G/ω–V) measurements of the MOS capacitor were carried out for voltage frequencies from 50 kHz to 1 MHz at several steps. The parameters of doping concentration, diffusion potential, built-in potential, barrier height, Fermi energy level, the image force barrier lowering and the depletion layer width were calculated by C–V and G/ω–V data. While the depletion layer width decreased with increasing frequencies, the diffusion potential and the barrier height increased a little with small frequencies (200 kHz ≤ f) first, then decreased insignificantly. We also studied the frequency effects on the series resistance (Rs) and the interface state density (Dit) through the C–V and G/ω–V curves, and found noticeable decreases in Rs and Dit values with increasing frequency. The measured and calculated results reveal that both Rs and Dit frequency dependence have significant impacts on Er2O3/SiO2/n-Si MOS capacitor properties. These effects are basically because of the interfacial charge behavior of thin SiO2 layer contained in between n-Si and Er2O3.

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Acknowledgment

This work is supported by the Presidency of Turkey, Presidency of Strategy and Budget under Contract Number: 2016K121110.

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Authors and Affiliations

  1. Nuclear Radiation Detectors Applications and Research Center, Bolu Abant Izzet Baysal University, 14030, Bolu, Turkey

    Aliekber Aktağ & Ercan Yılmaz

  2. Physics Department, Bolu Abant Izzet Baysal University, 14030, Bolu, Turkey

    Aliekber Aktağ, Alex Mutale & Ercan Yılmaz

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  1. Aliekber Aktağ
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  2. Alex Mutale
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Correspondence to Aliekber Aktağ.

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Aktağ, A., Mutale, A. & Yılmaz, E. Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor. J Mater Sci: Mater Electron 31, 9044–9051 (2020). https://doi.org/10.1007/s10854-020-03438-z

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  • DOI: https://doi.org/10.1007/s10854-020-03438-z

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