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Rewritable bistable memory device in polymethyl methacrylate carbon nanotube composite films

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Abstract

The rewritable bistable memory characteristics have been studied in polymethyl methacrylate (PMMA) and carboxylated multi-walled carbon nanotubes (CNT) composite films. The sandwich structure FTO/PMMA + CNTs/Ag devices were prepared by spin coating and vacuum evaporation process. The device exhibited rewritable bistable resistive switching with switch-on voltage of ~ − 1.5 V, switch-off voltage of ~ 3.4 V, and a high ON/OFF ratio almost of 105. The rewritable behavior of the FTO/PMMA + CNTs/Ag device has been investigated by the endurance test, retention test, and the write-read-erase-reread multiple-cycle tests. The FTO/PMMA + CNTs/Ag device exhibited good retention performance for 2 × 105 s and underwent 104 read pulses. The conduction mechanism in ON state obeys Ohmic conduction; simultaneously, for OFF state, trap-limited space-charge limited conduction was discovered to be the dominant conduction mechanism.

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Acknowledgements

This work is supported by National Natural Science Foundation of China (NO.61761048).

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Authors and Affiliations

  1. School of Engineering, Dali University, Dali, China

    Enming Zhao, Xiaodan Liu, Guangyu Liu & Bao Zhou

  2. School of Electrical and Information Engineering, Yunnan Minzu University, Kunming, China

    Chuanxi Xing

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  1. Enming Zhao
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  2. Xiaodan Liu
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  3. Guangyu Liu
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  4. Bao Zhou
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  5. Chuanxi Xing
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Correspondence to Bao Zhou.

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Zhao, E., Liu, X., Liu, G. et al. Rewritable bistable memory device in polymethyl methacrylate carbon nanotube composite films. J Mater Sci: Mater Electron 31, 3642–3647 (2020). https://doi.org/10.1007/s10854-020-02921-x

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