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Transfer printing via a PAA sacrificial layer for wrinkle-free PDMS metallization

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Abstract

Polydimethylsiloxane (PDMS) metallization has been extensively used in varieties of micro- and nanosystem technologies. However, the deposited metal film on the PDMS surface is prone to wrinkling because of a large thermal mismatch stress, which may cause difficulties in some applications. In this work, a simple transfer printing method via a poly(acrylic acid) (PAA) sacrificial layer for PDMS metallization is presented. A PAA film was spin-coated on the silicon substrate, metal patterns were fabricated on the PAA film based on photolithography techniques, and a PDMS sheet was put on the surface of metal patterns and separated with metal patterns from the silicon substrate by dissolving the PAA film in room-temperature water. Au patterns with a variety of shapes and sizes were successfully transferred on the PDMS sheet, and there were no wrinkles in Au patterns. As a demonstration, a PDMS-based tunable diffraction grating with a line width of 2 µm and an initial period of 4 µm was fabricated. The grating displayed excellent diffraction efficiencies, and the period could be tuned by simply stretching the grating.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant nos. 51875083, 51621064, 51905078).

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Authors and Affiliations

  1. Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China

    Junshan Liu, Xiaoguang Hu, Zelong Wang, Yindi Cai, Zhe Liu, Zehan Liu, Zheng Xu, Xi Zhang & Liqun Du

  2. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian, 116024, China

    Junshan Liu

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  1. Junshan Liu
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  2. Xiaoguang Hu
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  3. Zelong Wang
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Liu, J., Hu, X., Wang, Z. et al. Transfer printing via a PAA sacrificial layer for wrinkle-free PDMS metallization. J Mater Sci: Mater Electron 31, 2347–2352 (2020). https://doi.org/10.1007/s10854-019-02767-y

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  • DOI: https://doi.org/10.1007/s10854-019-02767-y

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