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Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

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Abstract

We perform pulsed DC sputtering of aluminium nitride (002) thin films on top of cubic silicon carbide-on-silicon (100) substrates at different substrate temperatures and deposition powers. The films are characterized using the following parameters: FWHM of diffraction peak, FWHM of the rocking curve, residual stress, thickness, deposition rate, grain size, and surface roughness. The overall quality of the films improve at escalated temperature and power. However, they have hillocks on the surface, which is caused by high amount of tensile stress.

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Acknowledgments

This work is supported by Queensland Micro- and Nanotechnology Centre (QMNC) and School of Engineering and Built Environment. This work was performed in part at the Queensland node of the Australian National Fabrication Facility, a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australia’s researchers.

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Authors and Affiliations

  1. Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia

    A. Iqbal, G. Walker, L. Hold, A. Lacopi & F. Mohd-Yasin

  2. Department of Electrical Engineering, University of Engineering and Technology, Peshawar, KPK, Pakistan

    A. Iqbal

  3. Bluglass Ltd, 74 Asquith Street, Silverwater, NSW, 2128, Australia

    A. Fernandes

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  1. A. Iqbal
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  2. G. Walker
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  6. F. Mohd-Yasin
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Correspondence to F. Mohd-Yasin.

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Iqbal, A., Walker, G., Hold, L. et al. Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power. J Mater Sci: Mater Electron 31, 239–248 (2020). https://doi.org/10.1007/s10854-019-02480-w

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  • DOI: https://doi.org/10.1007/s10854-019-02480-w

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